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BSZ120P03NS3GATMA1 - Infineon

Description: INFINEON - BSZ120P03NS3GATMA1 - Power MOSFET, P Channel, 30 V, 40 A, 0.009 ohm, PG-TSDSON, Surface Mount

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Symbol
BSZ120P03NS3GATMA1 - Infineon - PCB symbol
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PCB Footprints
BSZ120P03NS3GATMA1 - Infineon PCB footprint - Other - Other - PG-TSDSON-8_1.1h
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3D Models
BSZ120P03NS3GATMA1 - Infineon - 3D model - Other - PG-TSDSON-8_1.1h
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BSZ120P03NS3GATMA1 Details

  • Manufacturer Part Number:

    BSZ120P03NS3GATMA1

  • Pbfree Code:

    No

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    GREEN, PLASTIC, TSDSON-8

  • Pin Count:

    8

  • Country Of Origin:

    Austria, Malaysia

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    14 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    73 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    11 A

  • Drain-source On Resistance-Max:

    0.02 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    S-PDSO-F8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    P-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    160 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

BSZ120P03NS3GATMA1 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the BSZ120P03NS3GATMA1 is a 3.3mm x 3.3mm QFN package with a 0.5mm pitch. The datasheet provides a recommended land pattern and soldering guidelines.
  • To ensure reliability in high-temperature applications, follow the recommended operating conditions, derate the power dissipation according to the thermal derating curve, and ensure good thermal design and heat sinking. Additionally, consider using a thermal interface material to improve heat transfer.
  • The maximum allowed voltage on the gate of the BSZ120P03NS3GATMA1 is ±20V. Exceeding this voltage may damage the device.
  • Yes, the BSZ120P03NS3GATMA1 is suitable for switching applications. However, ensure that the switching frequency is within the recommended range, and follow the guidelines for gate drive and layout to minimize switching losses and electromagnetic interference (EMI).
  • To protect the BSZ120P03NS3GATMA1 from ESD, follow proper handling and storage procedures, use ESD-protective packaging and materials, and implement ESD protection circuits in the application.

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BSZ120P03NS3GATMA1 Overview

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To find more CAD model downloads similar to this part, try a partial part number search, like BSZ12, or try a keyword search, such as Power Field-Effect Transistors

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