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BSZ123N08NS3G - Infineon

Description: 10 A, 80 V, 0.0123 OHM, N-CHANNEL, SI, POWER, MOSFET

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PCB Footprints
BSZ123N08NS3G - Infineon PCB footprint - Other - Other - PG-TDSON-8-2016
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3D Models
BSZ123N08NS3G - Infineon  - 3D model - Other - PG-TDSON-8-2016
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BSZ123N08NS3G Details

  • Manufacturer Part Number:

    BSZ123N08NS3G

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Pin Count:

    8

  • Country Of Origin:

    Malaysia

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    110 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    80 V

  • Drain Current-Max (ID):

    10 A

  • Drain-source On Resistance-Max:

    0.0123 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    S-PDSO-N8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    66 W

  • Pulsed Drain Current-Max (IDM):

    160 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

BSZ123N08NS3G Frequently Asked Questions (FAQs)

  • Infineon provides a recommended PCB layout for the BSZ123N08NS3G in their application note AN2013-03. It suggests using a thermal pad on the bottom of the package, connected to a large copper area on the PCB to dissipate heat efficiently.
  • To ensure proper biasing during startup, Infineon recommends using a soft-start circuit to slowly ramp up the gate voltage. This can be achieved using an external resistor-capacitor network or an integrated soft-start circuit in the driver IC.
  • Although not explicitly stated in the datasheet, Infineon's application note AN2013-03 recommends limiting voltage overshoots to 10% of the maximum rated voltage (VDS) to prevent damage to the device.
  • Yes, the BSZ123N08NS3G is qualified according to AEC-Q101, making it suitable for automotive applications. Additionally, Infineon provides a dedicated high-reliability version, the BSZ123N08NS3G-HR, which meets the requirements of high-reliability industries.
  • Infineon recommends following standard ESD handling procedures, such as using ESD-protective packaging, wrist straps, and mats. Additionally, the device has built-in ESD protection, but it's essential to follow proper handling and assembly procedures to prevent damage.

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