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BSZ12DN20NS3GATMA1 - Infineon

Description: Trans MOSFET N-CH 200V 11.3A 8-Pin TSDSON EP T/R

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BSZ12DN20NS3GATMA1 - Infineon - PCB symbol
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PCB Footprints
BSZ12DN20NS3GATMA1 - Infineon PCB footprint - Other - Other - PG-TSDSON-8 _2022
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BSZ12DN20NS3GATMA1 - Infineon - 3D model - Other - PG-TSDSON-8 _2022
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BSZ12DN20NS3GATMA1 Details

  • Manufacturer Part Number:

    BSZ12DN20NS3GATMA1

  • Pbfree Code:

    No

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    GREEN, PLASTIC, TSDSON-8

  • Pin Count:

    8

  • Country Of Origin:

    Mainland China, Malaysia

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    60 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    200 V

  • Drain Current-Max (ID):

    11.3 A

  • Drain-source On Resistance-Max:

    0.125 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    S-PDSO-N8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    45 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

BSZ12DN20NS3GATMA1 Frequently Asked Questions (FAQs)

  • Infineon recommends a thermal pad on the bottom of the package, connected to a large copper area on the PCB to dissipate heat efficiently. A minimum of 2oz copper thickness is recommended.
  • Infineon recommends following the thermal design guidelines, ensuring a maximum junction temperature of 150°C, and using a suitable thermal interface material between the device and heat sink.
  • The BSZ12DN20NS3GATMA1 has integrated ESD protection, but it's still recommended to follow standard ESD handling precautions during assembly and handling to prevent damage.
  • Yes, the BSZ12DN20NS3GATMA1 is AEC-Q101 qualified, making it suitable for automotive and high-reliability applications. However, additional testing and validation may be required depending on the specific use case.
  • Infineon recommends using a gate drive circuit with a voltage range of 10-15V, a current capability of 1-2A, and a rise/fall time of <10ns to ensure proper switching performance.

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BSZ12DN20NS3GATMA1 Overview

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