Part Image

BSZ16DN25NS3G - Infineon

Description: OptiMOSTM3 Power-Transistor

Download BSZ16DN25NS3G Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
BSZ16DN25NS3G - Infineon PCB footprint - Other - Other - BSZ16DN25NS3G-3
click to zoom
3D Models
BSZ16DN25NS3G - Infineon  - 3D model - Other - BSZ16DN25NS3G-3
click to zoom

BSZ16DN25NS3G Details

  • Manufacturer Part Number:

    BSZ16DN25NS3G

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Pin Count:

    8

  • Country Of Origin:

    Austria, Mainland China, Malaysia

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    120 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    250 V

  • Drain Current-Max (ID):

    10.9 A

  • Drain-source On Resistance-Max:

    0.165 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    S-PDSO-N8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    62.5 W

  • Pulsed Drain Current-Max (IDM):

    44 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

BSZ16DN25NS3G Frequently Asked Questions (FAQs)

  • Infineon provides a recommended PCB layout for the BSZ16DN25NS3G in their application note AN2013-03. It suggests using a thermal pad on the bottom side of the package, connected to a large copper area on the PCB to dissipate heat efficiently.
  • To ensure reliable operation in high-temperature environments, it's essential to follow the recommended operating conditions and derating guidelines provided in the datasheet. Additionally, consider using thermal management techniques such as heat sinks, thermal interfaces, and airflow management to keep the device temperature within the specified range.
  • The BSZ16DN25NS3G has built-in ESD protection, but it's still important to follow proper handling and storage precautions to prevent damage. Infineon recommends following the ESD handling guidelines outlined in their application note AN2013-01, which includes using ESD-protective packaging, wrist straps, and mats.
  • Yes, the BSZ16DN25NS3G is AEC-Q101 qualified, making it suitable for use in automotive applications. However, it's essential to ensure that the device meets the specific requirements of your application, including temperature range, voltage, and current ratings.
  • Infineon provides recommended soldering and rework conditions for the BSZ16DN25NS3G in their application note AN2013-02. The note outlines the recommended soldering temperature profiles, rework techniques, and handling precautions to prevent damage during the assembly process.

Trust Checks

This model has been provided by an expert contributor.
Expert Contribution
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

BSZ16DN25NS3G Overview

Use the download button to access the BSZ16DN25NS3G schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like BSZ16, or try a keyword search, such as Power Field-Effect Transistors

Parts related to BSZ16DN25NS3G

Showing 0 results