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BSZ16DN25NS3GATMA1 - Infineon

Description: MOSFET N-Ch 250V 10.9A TDSON-8 OptiMOS 3

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BSZ16DN25NS3GATMA1 - Infineon PCB footprint - Other - Other - BSZ16DN25NS3GATMA1-2
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BSZ16DN25NS3GATMA1 - Infineon  - 3D model - Other - BSZ16DN25NS3GATMA1-2
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BSZ16DN25NS3GATMA1 Details

  • Manufacturer Part Number:

    BSZ16DN25NS3GATMA1

  • Pbfree Code:

    No

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    GREEN, PLASTIC, TSDSON-8

  • Pin Count:

    8

  • Country Of Origin:

    Austria, Mainland China, Malaysia

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    120 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    250 V

  • Drain Current-Max (ID):

    10.9 A

  • Drain-source On Resistance-Max:

    0.165 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    S-PDSO-N8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    44 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

BSZ16DN25NS3GATMA1 Frequently Asked Questions (FAQs)

  • The BSZ16DN25NS3GATMA1 can operate safely between -40°C to 150°C, but the optimal operating temperature range is between 25°C to 125°C for maximum performance and reliability.
  • To ensure proper biasing, connect the gate to a voltage source through a resistor (e.g., 1 kΩ) and ensure the drain-source voltage is within the recommended range (typically 10-20 V). Consult the datasheet for specific biasing requirements.
  • For optimal thermal performance, use a multi-layer PCB with a thermal via under the device, and ensure good thermal conductivity between the device and the heat sink. Follow the recommended PCB layout guidelines in the datasheet and application notes.
  • Handle the device with ESD-protective equipment, such as wrist straps and mats. Ensure the PCB design includes ESD protection components, like TVS diodes or ESD arrays, and follow proper handling and storage procedures.
  • Follow the recommended soldering profile in the datasheet, with a peak temperature of 260°C (500°F) for a maximum of 10 seconds. For rework, use a low-temperature soldering iron (below 350°C) and avoid applying excessive force or heat to the device.

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BSZ16DN25NS3GATMA1 Overview

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