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BUB323ZT4G - onsemi

Description: Integrated High–Voltage Active Clamp; Tight Clamping Voltage Window (350 V to 450 V)Guaranteed Over the –40°C to +125°C Temperature Range; Clamping Energy Capability 100% Tested in a Live Ignition Circuit; High DC Current Gain/Low Saturation Voltages Specified Over Full Temperature Range; Design Guarantees Operation in SOA at All Times; Pb-Free Packages are Available

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BUB323ZT4G - onsemi PCB footprint - Other - Other - BUB323ZT4G-2
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BUB323ZT4G Details

  • Manufacturer Part Number:

    BUB323ZT4G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    D2PAK 2 LEAD

  • Pin Count:

    3

  • Manufacturer Package Code:

    418B-04

  • Country Of Origin:

    Mainland China, Malaysia

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    8 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    4

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    10 A

  • Collector-Emitter Voltage-Max:

    350 V

  • Configuration:

    DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

  • DC Current Gain-Min (hFE):

    500

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    NPN

  • Power Dissipation-Max (Abs):

    150 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    2 MHz

BUB323ZT4G Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the BUB323ZT4G is -55°C to 150°C.
  • To ensure reliability, follow the recommended assembly and soldering procedures, and ensure that the device is operated within the specified voltage and current ratings. Additionally, consider using a thermal management strategy to keep the device within its recommended operating temperature range.
  • The recommended PCB layout for the BUB323ZT4G involves using a thermal pad and thermal vias to dissipate heat. A heat sink or thermal interface material can also be used to improve thermal performance. Consult the onsemi application note for more detailed guidance.
  • When handling the BUB323ZT4G, ensure that you follow proper safety precautions to avoid electrical shock or injury. Use appropriate test equipment and safety gear, such as insulated tools and a safety mat, and ensure that the device is properly connected and configured before applying power.
  • When using the BUB323ZT4G in a high-frequency application, consider the device's parasitic capacitance and inductance, and ensure that the PCB layout is optimized for high-frequency performance. Additionally, consider using a decoupling capacitor and a low-ESR capacitor to minimize noise and ringing.

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BUB323ZT4G Overview

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Part Image BUB323Z onsemi

Power Bipolar Transistor, 10A I(C), 350V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin

Part Image BUB323ZG onsemi

Power Bipolar Transistor, 10A I(C), 350V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin