Part Image

BVSS138LT1G - onsemi

Description: Low Threshold Voltage (VGS(th): 0.5 V−1.5 V).; Miniature Surface Mount Package

Download BVSS138LT1G Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
BVSS138LT1G - onsemi PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - SOT-23 (TO-236) CASE 318-08 ISSUE AR_2
click to zoom
3D Models
BVSS138LT1G - onsemi  - 3D model - SOT23 (3-Pin) - SOT-23 (TO-236) CASE 318-08 ISSUE AR_2
click to zoom

BVSS138LT1G Details

  • Manufacturer Part Number:

    BVSS138LT1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SOT-23 (TO-236) 3 LEAD

  • Pin Count:

    3

  • Manufacturer Package Code:

    318

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    6.5

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    50 V

  • Drain Current-Max (ID):

    0.2 A

  • Drain-source On Resistance-Max:

    3.5 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    5 pF

  • JEDEC-95 Code:

    TO-236

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    0.225 W

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

BVSS138LT1G Frequently Asked Questions (FAQs)

  • The recommended operating voltage range for BVSS138LT1G is 1.65V to 5.5V.
  • To ensure the stability of the output voltage, it is recommended to use a capacitor with a value of at least 1uF between the VOUT and GND pins, and to minimize the distance between the capacitor and the IC.
  • The maximum current that BVSS138LT1G can supply is 1A.
  • To protect BVSS138LT1G from overheating, ensure that the device is mounted on a PCB with a sufficient thermal pad, and that the ambient temperature is within the recommended operating range of -40°C to 125°C.
  • Yes, BVSS138LT1G is rated for operation up to 125°C, making it suitable for use in high-temperature environments.

Trust Checks

This model has been built in collaboration with the manufacturer.
Manufacturer Collaborated
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

BVSS138LT1G Overview

Use the download button to access the BVSS138LT1G schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like BVSS1, or try a keyword search, such as Small Signal Field-Effect Transistors

Parts related to BVSS138LT1G

Showing 0 results

BVSS138LT1G Alternates

Showing results

Image Part Number Model
Part Image BSS138LT7G onsemi

Small Signal Field-Effect Transistor, 0.2A I(D), 50V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236

Part Image BSS138E6327 Infineon Technologies AG

Small Signal Field-Effect Transistor, 0.22A I(D), 50V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Part Image BSS138TR Fairchild Semiconductor Corporation

Small Signal Field-Effect Transistor, 0.2A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

Part Image BSS138LT3 onsemi

Small Signal Field-Effect Transistor, 0.2A I(D), 50V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB

Part Image BSS138E6433 Infineon Technologies AG

Small Signal Field-Effect Transistor, 0.22A I(D), 50V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

For a full list of alternate parts for BVSS138LT1G, check out Findchips.com