SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
DS Breakdown Voltage-Min:
1200 V
Drain Current-Max (ID):
120 A
Drain-source On Resistance-Max:
0.014 Ω
FET Technology:
METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss):
30 pF
JESD-30 Code:
R-XUFM-X18
Number of Elements:
2
Number of Terminals:
18
Operating Mode:
ENHANCEMENT MODE
Operating Temperature-Max:
150 °C
Operating Temperature-Min:
-40 °C
Package Body Material:
UNSPECIFIED
Package Shape:
RECTANGULAR
Package Style:
FLANGE MOUNT
Peak Reflow Temperature (Cel):
NOT SPECIFIED
Polarity/Channel Type:
N-CHANNEL
Reference Standard:
IEC-60747-8-4
Surface Mount:
NO
Terminal Form:
UNSPECIFIED
Terminal Position:
UPPER
Time@Peak Reflow Temperature-Max (s):
NOT SPECIFIED
Transistor Application:
SWITCHING
Transistor Element Material:
SILICON CARBIDE
CAB011M12FM3 Frequently Asked Questions (FAQs)
A 2-layer or 4-layer PCB with a thermal via array underneath the device is recommended. The thermal vias should be connected to a solid copper plane on the bottom layer to dissipate heat efficiently.
Use a wire bonding machine with a gold or aluminum wire of 1 mil (0.025 mm) diameter. The bonding temperature should be between 150°C to 200°C, and the bonding force should be around 20-30 grams.
Store the device in a dry, cool place away from direct sunlight. Handle the device by the package body, avoiding touching the leads or die. Use an anti-static wrist strap or mat when handling the device.
No, the recommended die attach material is silver-filled epoxy, and the die attach method should be a controlled atmosphere soldering process to ensure reliable bonding.
Use a moisture barrier bag or a dry nitrogen-filled package to store the device. During assembly, ensure the PCB and components are dry and free of moisture.
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CAB011M12FM3 Overview
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