SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND RTC
Gate-Emitter Voltage-Max:
20 V
JESD-30 Code:
R-XUFM-X7
Number of Elements:
2
Number of Terminals:
7
Operating Temperature-Max:
150 °C
Package Body Material:
UNSPECIFIED
Package Shape:
RECTANGULAR
Package Style:
FLANGE MOUNT
Polarity/Channel Type:
N-CHANNEL
Power Dissipation-Max (Abs):
960 W
Qualification Status:
Not Qualified
Surface Mount:
NO
Terminal Form:
UNSPECIFIED
Terminal Position:
UPPER
Transistor Application:
POWER CONTROL
Transistor Element Material:
SILICON
VCEsat-Max:
2.2 V
CM400DU-12F Frequently Asked Questions (FAQs)
The maximum allowed junction temperature for the CM400DU-12F is 150°C, as specified in the datasheet. However, it's recommended to keep the junction temperature below 125°C for reliable operation and to prevent thermal runaway.
To ensure proper heat sinking, make sure to use a heat sink with a thermal resistance of less than 0.5°C/W. Apply a thin layer of thermal interface material (TIM) to the base plate of the module, and securely fasten the heat sink to the module using screws or clips. Ensure good thermal contact between the module and heat sink.
The recommended gate resistance for the CM400DU-12F is between 10 ohms and 20 ohms. This value helps to prevent oscillations and ensures stable switching. However, the optimal gate resistance may vary depending on the specific application and circuit design.
Yes, the CM400DU-12F can be used in a parallel configuration to increase the current handling capability. However, it's essential to ensure that the modules are matched in terms of their electrical characteristics, and that the gate drive circuits are properly synchronized to prevent uneven current sharing.
The maximum allowed dv/dt for the CM400DU-12F is 5 kV/μs. Exceeding this value can lead to spurious turn-on or oscillations. To ensure reliable operation, it's recommended to limit the dv/dt to 2 kV/μs or less.
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CM400DU-12F Overview
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