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CPH3356-TL-H - onsemi

Description: Obsolete - Single P-Channel Power MOSFET, -20V, -2.5A, 137mΩ

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CPH3356-TL-H - onsemi - PCB symbol
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PCB Footprints
CPH3356-TL-H - onsemi PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - CPH3356-TL-H
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CPH3356-TL-H - onsemi - 3D model - SOT23 (3-Pin) - CPH3356-TL-H
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CPH3356-TL-H Details

  • Manufacturer Part Number:

    CPH3356-TL-H

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    CPH3

  • Package Description:

    SC-59, 3 PIN

  • Pin Count:

    3

  • Manufacturer Package Code:

    318BA

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    4 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    20 V

  • Drain Current-Max (ID):

    2.5 A

  • Drain-source On Resistance-Max:

    0.137 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-236

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e6

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    P-CHANNEL

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin/Bismuth (Sn/Bi)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

CPH3356-TL-H Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. Ensure a minimum of 1 oz copper thickness and a thermal relief pattern under the device.
  • Implement a robust thermal management system, including a heat sink, thermal interface material, and a cooling fan if necessary. Monitor junction temperature and adjust the system design accordingly.
  • Handle the device with ESD-protective equipment and follow standard ESD handling procedures. The device has built-in ESD protection, but it's not a substitute for proper handling and storage.
  • Yes, the CPH3356-TL-H is AEC-Q100 qualified and suitable for automotive and high-reliability applications. However, ensure you follow the recommended operating conditions and design guidelines.
  • Use a logic analyzer or oscilloscope to monitor the device's inputs and outputs. Check the datasheet for troubleshooting guidelines and consult onsemi's application notes and technical support resources.

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CPH3356-TL-H Overview

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CPH3356-TL-H Alternates

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Part Image CPH3356-TL-W onsemi

Small Signal Field-Effect Transistor, 2.5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236
Part Image CPH3356TL SANYO Semiconductor Co Ltd

Small Signal Field-Effect Transistor, 2.5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236