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CSD16327Q3 - Texas Instruments

Description: MOSFET N-Channel NexFET Pwr MOSFET

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CSD16327Q3 Details

  • Manufacturer Part Number:

    CSD16327Q3

  • Brand Name:

    Texas Instruments

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Manufacturer:

    Texas Instruments

  • YTEOL:

    15

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    125 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE

  • DS Breakdown Voltage-Min:

    25 V

  • Drain Current-Max (ID):

    60 A

  • Drain-source On Resistance-Max:

    0.0065 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    65 pF

  • JESD-30 Code:

    R-PDSO-N8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    74 W

  • Pulsed Drain Current-Max (IDM):

    112 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

CSD16327Q3 Frequently Asked Questions (FAQs)

  • A good PCB layout for the CSD16327Q3 involves keeping the high-current paths short and wide, using multiple vias for thermal dissipation, and separating the high-frequency and low-frequency circuits. TI provides a recommended PCB layout in the datasheet and application notes.
  • To optimize the gate drive circuit, ensure the gate drive voltage is within the recommended range (10-15V), use a low-impedance gate drive circuit, and add a gate resistor to slow down the turn-on and turn-off times to reduce EMI. TI provides a recommended gate drive circuit in the datasheet.
  • The maximum allowed junction temperature for the CSD16327Q3 is 150°C. To ensure you don't exceed it, use a thermal pad or heat sink, ensure good airflow, and monitor the device temperature using a thermocouple or thermal sensor.
  • Use a voltage regulator or overvoltage protection circuit to prevent voltage spikes, and add overcurrent protection using a current sense resistor and a comparator or a dedicated overcurrent protection IC.
  • The recommended operating frequency range for the CSD16327Q3 is up to 1 MHz. Operating at higher frequencies can reduce efficiency and increase EMI, while operating at lower frequencies can reduce switching losses but increase conduction losses.

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CSD16327Q3 Overview

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About Texas Instruments

Texas Instruments (TI) designs and manufactures semiconductors and integrated circuits for a wide range of applications. The company's product portfolio includes analog chips, which are essential for managing power and signal functions in electronic devices, and embedded processors, which serve as the brains in various systems, enabling functionality in everything from industrial equipment to consumer electronics. TI's innovations in semiconductor technology have made it a leader in the industry.

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CSD16327Q3 Alternates

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Part Image CSD16327Q3T Texas Instruments

Power Field-Effect Transistor, 60A I(D), 25V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET