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CSD17318Q2 - Texas Instruments

Description: 30V, N ch NexFET MOSFET™, single SON2x2, 16.9mOhm

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CSD17318Q2 - Texas Instruments - PCB symbol
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CSD17318Q2 - Texas Instruments PCB footprint - Other - Other - CSD17318Q2-1
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CSD17318Q2 Details

  • Manufacturer Part Number:

    CSD17318Q2

  • Brand Name:

    Texas Instruments

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Date Of Intro:

    2017-07-19

  • Manufacturer:

    Texas Instruments

  • YTEOL:

    15

  • Avalanche Energy Rating (Eas):

    7.7 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    25 A

  • Drain-source On Resistance-Max:

    0.03 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    51 pF

  • JESD-30 Code:

    S-PDSO-N6

  • JESD-609 Code:

    e4

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    68 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Nickel/Palladium/Gold (Ni/Pd/Au)

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

CSD17318Q2 Frequently Asked Questions (FAQs)

  • A good PCB layout for the CSD17318Q2 involves keeping the high-current paths short and wide, using multiple vias for heat dissipation, and separating the high-frequency and low-frequency circuits. TI provides a recommended PCB layout in the datasheet and application notes.
  • To optimize the gate drive circuit, use a gate driver with a high current capability, ensure the gate drive voltage is within the recommended range, and add a gate resistor to slow down the turn-on and turn-off times to reduce EMI. TI provides guidelines for gate drive circuit design in the application notes.
  • Thermal management is critical for the CSD17318Q2. Ensure good heat dissipation by using a heat sink, thermal interface material, and a PCB with thermal vias. Monitor the junction temperature and adjust the thermal design accordingly. TI provides thermal design guidelines in the datasheet and application notes.
  • Use a voltage regulator or a TVS diode to protect the CSD17318Q2 from overvoltage conditions. For overcurrent protection, use a current sense resistor and a comparator to detect overcurrent conditions and shut down the device if necessary. TI provides guidelines for overvoltage and overcurrent protection in the application notes.
  • ESD protection is critical for the CSD17318Q2. Use ESD protection devices such as TVS diodes or ESD arrays on the input and output pins. Ensure that the PCB layout and component placement minimize the risk of ESD damage. TI provides ESD protection guidelines in the datasheet and application notes.

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CSD17318Q2 Overview

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About Texas Instruments

Texas Instruments (TI) designs and manufactures semiconductors and integrated circuits for a wide range of applications. The company's product portfolio includes analog chips, which are essential for managing power and signal functions in electronic devices, and embedded processors, which serve as the brains in various systems, enabling functionality in everything from industrial equipment to consumer electronics. TI's innovations in semiconductor technology have made it a leader in the industry.

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CSD17318Q2 Alternates

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Part Image CSD17318Q2T Texas Instruments

Power Field-Effect Transistor, 25A I(D), 30V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET