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CSD17483F4T - Texas Instruments

Description: MOSFET 30V,N-Ch FemtoFET MOSFET

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CSD17483F4T - Texas Instruments PCB footprint - Other - Other - Femto(0402) 1.00 mm × 0.60 mm SMD Lead Less
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3D Models
CSD17483F4T - Texas Instruments  - 3D model - Other - Femto(0402) 1.00 mm × 0.60 mm SMD Lead Less
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CSD17483F4T Details

  • Manufacturer Part Number:

    CSD17483F4T

  • Brand Name:

    Texas Instruments

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.21.00.40

  • Manufacturer:

    Texas Instruments

  • YTEOL:

    15

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE AND RESISTOR

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    1.5 A

  • Drain-source On Resistance-Max:

    0.55 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    3 pF

  • JESD-30 Code:

    R-XBCC-N3

  • JESD-609 Code:

    e4

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    UNSPECIFIED

  • Package Shape:

    RECTANGULAR

  • Package Style:

    CHIP CARRIER

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    0.5 W

  • Pulsed Drain Current-Max (IDM):

    5 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Nickel/Gold (Ni/Au)

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    BOTTOM

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

CSD17483F4T Frequently Asked Questions (FAQs)

  • For optimal thermal performance, it is recommended to use a 2-layer or 4-layer PCB with a solid ground plane on the bottom layer. This helps to dissipate heat efficiently. Additionally, ensure that the thermal vias are connected to the ground plane to reduce thermal resistance.
  • To ensure proper biasing, follow the recommended operating conditions outlined in the datasheet. Ensure the input voltage is within the specified range (1.5V to 5.5V) and the output voltage is within the specified range (1.2V to 5.5V). Also, ensure the input and output capacitors are properly sized and placed close to the device.
  • To ensure EMI and EMC compliance, follow proper PCB layout guidelines, such as keeping the device and its associated components away from the PCB edge, using a solid ground plane, and minimizing trace lengths. Additionally, use shielding and filtering components as necessary to reduce electromagnetic radiation.
  • To ensure proper power sequencing and startup, follow the recommended power-up and power-down sequences outlined in the datasheet. Ensure that the input voltage is stable and within the specified range before enabling the device. Also, ensure that the output voltage is properly regulated before connecting it to the load.
  • For high-temperature applications, ensure that the device is properly derated to prevent overheating. Follow the thermal derating curves provided in the datasheet to determine the maximum allowable power dissipation at elevated temperatures. Additionally, ensure proper airflow and heat sinking to reduce thermal resistance.

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CSD17483F4T Overview

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About Texas Instruments

Texas Instruments (TI) designs and manufactures semiconductors and integrated circuits for a wide range of applications. The company's product portfolio includes analog chips, which are essential for managing power and signal functions in electronic devices, and embedded processors, which serve as the brains in various systems, enabling functionality in everything from industrial equipment to consumer electronics. TI's innovations in semiconductor technology have made it a leader in the industry.

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Part Image CSD17483F4R Texas Instruments

Small Signal Field-Effect Transistor, 1.5A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET