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CSD17559Q5 - Texas Instruments

Description: 30V, N ch NexFET MOSFET™, single SON5x6, 1.5mOhm

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CSD17559Q5 Details

  • Manufacturer Part Number:

    CSD17559Q5

  • Brand Name:

    Texas Instruments

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Manufacturer:

    Texas Instruments

  • YTEOL:

    15

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    541 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    257 A

  • Drain-source On Resistance-Max:

    0.0015 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    113 pF

  • JESD-30 Code:

    R-PDSO-N8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    96 W

  • Pulsed Drain Current-Max (IDM):

    400 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

CSD17559Q5 Frequently Asked Questions (FAQs)

  • For optimal thermal performance, it is recommended to use a 2-layer or 4-layer PCB with a solid ground plane on the bottom layer, and to place thermal vias under the device to dissipate heat efficiently.
  • To ensure proper biasing, make sure to follow the recommended voltage and current ratings, and use a stable voltage regulator to power the device. Additionally, ensure that the input and output capacitors are properly sized and placed close to the device.
  • To ensure EMI and EMC compliance, use a shielded enclosure, keep the device away from noise sources, and use a common-mode choke or ferrite bead to filter out high-frequency noise. Also, ensure that the PCB layout is optimized for minimal radiation and susceptibility.
  • To troubleshoot issues, start by checking the device's thermal performance using thermal imaging or temperature sensors. Verify that the device is properly biased and that the input and output capacitors are functioning correctly. Use oscilloscopes or logic analyzers to debug signal integrity issues.
  • The CSD17559Q5 is designed to meet the reliability standards of the automotive industry, with a typical lifespan of 10-15 years or more, depending on operating conditions. However, it's essential to follow proper storage, handling, and operating procedures to ensure maximum reliability.

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CSD17559Q5 Overview

Use the download button to access the CSD17559Q5 3D model. You can still request or build the schematic symbol and PCB footprint by using the respective build or request forms on this page.
To find more CAD model downloads similar to this part, try a partial part number search, like CSD17, or try a keyword search, such as Power Field-Effect Transistors

About Texas Instruments

Texas Instruments (TI) designs and manufactures semiconductors and integrated circuits for a wide range of applications. The company's product portfolio includes analog chips, which are essential for managing power and signal functions in electronic devices, and embedded processors, which serve as the brains in various systems, enabling functionality in everything from industrial equipment to consumer electronics. TI's innovations in semiconductor technology have made it a leader in the industry.

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Part Image CSD17559Q5T Texas Instruments

Power Field-Effect Transistor, 257A I(D), 30V, 0.0015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET