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CSD17579Q5AT - Texas Instruments

Description: CSD17579Q5A 30-V N-Channel NexFET™ Power MOSFET

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CSD17579Q5AT - Texas Instruments PCB footprint - Other - Other - Q5A_23
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CSD17579Q5AT - Texas Instruments  - 3D model - Other - Q5A_23
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CSD17579Q5AT Details

  • Manufacturer Part Number:

    CSD17579Q5AT

  • Brand Name:

    Texas Instruments

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Manufacturer:

    Texas Instruments

  • YTEOL:

    15

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    14.5 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    46 A

  • Drain-source On Resistance-Max:

    0.0133 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    52 pF

  • JESD-30 Code:

    R-PDSO-N8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    105 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

CSD17579Q5AT Frequently Asked Questions (FAQs)

  • A good PCB layout for the CSD17579Q5AT involves keeping the input and output traces short and wide, using a solid ground plane, and placing decoupling capacitors close to the device. Additionally, it's recommended to use a 4-layer PCB with a dedicated power plane and a dedicated ground plane.
  • To ensure proper biasing, connect the VCC pin to a stable voltage source, and the EN pin to a logic-level signal. The device also requires a bypass capacitor between the VCC pin and the GND pin to filter out noise. Additionally, ensure that the input voltage is within the recommended operating range.
  • The maximum power dissipation of the CSD17579Q5AT is dependent on the ambient temperature and the thermal resistance of the package. According to the datasheet, the maximum power dissipation is 1.4W at 25°C ambient temperature. However, this value can be derated based on the actual operating conditions.
  • The CSD17579Q5AT is rated for operation up to 125°C junction temperature. However, the device's performance and reliability may degrade at high temperatures. It's recommended to derate the device's power dissipation and ensure proper thermal management to prevent overheating.
  • To troubleshoot issues with the CSD17579Q5AT, start by verifying the power supply voltage and ensuring that the device is properly biased. Check for any signs of overheating, and verify that the input and output signals are within the recommended operating range. Use an oscilloscope to inspect the waveforms and look for any signs of distortion or noise.

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CSD17579Q5AT Overview

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About Texas Instruments

Texas Instruments (TI) designs and manufactures semiconductors and integrated circuits for a wide range of applications. The company's product portfolio includes analog chips, which are essential for managing power and signal functions in electronic devices, and embedded processors, which serve as the brains in various systems, enabling functionality in everything from industrial equipment to consumer electronics. TI's innovations in semiconductor technology have made it a leader in the industry.

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Part Image CSD17579Q5A Texas Instruments

Power Field-Effect Transistor, 46A I(D), 30V, 0.0133ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET