Part Image

CSD18509Q5B - Texas Instruments

Description: 40V, N-Channel NexFET™ Power MOSFET, CSD18509Q5B

Download CSD18509Q5B Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
CSD18509Q5B - Texas Instruments PCB footprint - Other - Other - Q5B
click to zoom
3D Models
CSD18509Q5B - Texas Instruments  - 3D model - Other - Q5B
click to zoom

CSD18509Q5B Details

  • Manufacturer Part Number:

    CSD18509Q5B

  • Brand Name:

    Texas Instruments

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Manufacturer:

    Texas Instruments

  • YTEOL:

    15

  • Additional Feature:

    AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

  • Avalanche Energy Rating (Eas):

    345 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    40 V

  • Drain Current-Max (ID):

    100 A

  • Drain-source On Resistance-Max:

    0.0017 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    354 pF

  • JESD-30 Code:

    R-PDSO-N8

  • JESD-609 Code:

    e4

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    195 W

  • Pulsed Drain Current-Max (IDM):

    400 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Nickel/Palladium/Gold (Ni/Pd/Au)

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

CSD18509Q5B Frequently Asked Questions (FAQs)

  • A good PCB layout for the CSD18509Q5B should prioritize thermal dissipation. Place the device near a thermal pad or a heat sink, and ensure good copper pour coverage around the device. Avoid routing high-current traces under the device, and use thermal vias to dissipate heat efficiently.
  • To ensure proper biasing, follow the recommended operating conditions in the datasheet. Typically, this involves setting the input voltage (VIN) between 4.5V and 18V, and the output voltage (VOUT) between 0.8V and 3.3V. Also, ensure the input and output capacitors are properly selected and placed close to the device.
  • When selecting input and output capacitors, consider the following: input capacitor should have a low ESR (Equivalent Series Resistance) and be rated for the input voltage; output capacitor should have a low ESR and be rated for the output voltage; and both capacitors should be placed close to the device to minimize parasitic inductance.
  • To troubleshoot issues, start by verifying the PCB layout and component selection. Check for proper decoupling, correct input and output capacitor selection, and ensure the device is properly biased. Use an oscilloscope to monitor the input and output waveforms, and consult the datasheet for guidance on troubleshooting common issues.
  • The CSD18509Q5B has a maximum junction temperature (TJ) of 150°C. Ensure good airflow around the device, and consider using a heat sink or thermal pad to dissipate heat. Monitor the device's temperature and adjust the thermal design accordingly to prevent overheating.

Trust Checks

This model has been provided by an expert contributor.
Expert Contribution
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

CSD18509Q5B Overview

Use the download button to access the CSD18509Q5B schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like CSD18, or try a keyword search, such as Power Field-Effect Transistors

About Texas Instruments

Texas Instruments (TI) designs and manufactures semiconductors and integrated circuits for a wide range of applications. The company's product portfolio includes analog chips, which are essential for managing power and signal functions in electronic devices, and embedded processors, which serve as the brains in various systems, enabling functionality in everything from industrial equipment to consumer electronics. TI's innovations in semiconductor technology have made it a leader in the industry.

Parts related to CSD18509Q5B

Showing 0 results

CSD18509Q5B Alternates

Showing results

Image Part Number Model
Part Image CSD18509Q5BT Texas Instruments

Power Field-Effect Transistor, 100A I(D), 40V, 0.0017ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET