CSD18510KTTT footprint, schematic symbol and 3D model by Texas Instruments

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CSD18510KTTT - Texas Instruments PCB footprint - Other - Other - CSD18510KTTT-1

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Part Number CSD18510KTTT
Manufacturer Texas Instruments
Pin Count 3
Part Category MOSFET (N-Channel)
Package Category Other
Footprint Name Other - CSD18510KTTT-1
Released Date Jun 15, 2022
Last Modified Date Mar 7, 2023 4:10 PM UTC
Pinout / Pin List Click Here (Member Only)

CSD18510KTTT Details

Manufacturer Part Number:
CSD18510KTTT
Brand Name:
Texas Instruments
Pbfree Code:
Yes
Rohs Code:
Yes
Part Life Cycle Code:
Active
ECCN Code:
EAR99
HTS Code:
8541.29.00.95
Date Of Intro:
2016-12-17
Manufacturer:
Texas Instruments
YTEOL:
15
Additional Feature:
AVALANCHE RATED
Avalanche Energy Rating (Eas):
328 mJ
Case Connection:
DRAIN
Configuration:
SINGLE
DS Breakdown Voltage-Min:
40 V
Drain Current-Max (ID):
200 A
Drain-source On Resistance-Max:
0.0026 Ω
FET Technology:
METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss):
551 pF
JEDEC-95 Code:
TO-263AB
JESD-30 Code:
R-PSSO-G2
JESD-609 Code:
e3
Moisture Sensitivity Level:
2
Number of Elements:
1
Number of Terminals:
2
Operating Mode:
ENHANCEMENT MODE
Operating Temperature-Max:
175 °C
Operating Temperature-Min:
-55 °C
Package Body Material:
PLASTIC/EPOXY
Package Shape:
RECTANGULAR
Package Style:
SMALL OUTLINE
Peak Reflow Temperature (Cel):
260
Polarity/Channel Type:
N-CHANNEL
Pulsed Drain Current-Max (IDM):
400 A
Surface Mount:
YES
Terminal Finish:
Matte Tin (Sn)
Terminal Form:
GULL WING
Terminal Position:
SINGLE
Time@Peak Reflow Temperature-Max (s):
30
Transistor Application:
SWITCHING
Transistor Element Material:
SILICON

CSD18510KTTT Frequently Asked Questions (FAQs)

The maximum operating temperature range for the CSD18510KTTT is -55°C to 150°C, but it's recommended to operate within -40°C to 125°C for optimal performance.
To ensure the N-channel MOSFET is fully turned on, apply a gate-source voltage (Vgs) of at least 4.5V, and a gate current (Ig) of at least 10mA. This will minimize the on-state resistance (Rds(on)) and ensure optimal performance.
To minimize parasitic inductance, use a compact PCB layout with short, wide traces. Place the MOSFET close to the load, and use a solid ground plane to reduce inductance. Avoid using vias or narrow traces near the MOSFET, as they can increase inductance.
To protect the CSD18510KTTT from ESD, handle the device by the body or pins, avoid touching the die, and use an ESD wrist strap or mat. Store the device in an anti-static bag or container, and use ESD-sensitive handling procedures during assembly and testing.
The maximum allowed drain-source voltage (Vds) for the CSD18510KTTT is 100V. Exceeding this voltage can cause permanent damage to the device.

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About Texas Instruments

Texas Instruments (TI) designs and manufactures semiconductors and integrated circuits for a wide range of applications. The company's product portfolio includes analog chips, which are essential for managing power and signal functions in electronic devices, and embedded processors, which serve as the brains in various systems, enabling functionality in everything from industrial equipment to consumer electronics. TI's innovations in semiconductor technology have made it a leader in the industry.

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