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CSD18510KTT - Texas Instruments

Description: 40V, N ch NexFET MOSFET™, single D2PAK, 1.7mOhm

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PCB Footprints
CSD18510KTT - Texas Instruments PCB footprint - Other - Other - KTT-(R-PSFM-G3)
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CSD18510KTT - Texas Instruments  - 3D model - Other - KTT-(R-PSFM-G3)
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CSD18510KTT Details

  • Manufacturer Part Number:

    CSD18510KTT

  • Brand Name:

    Texas Instruments

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Date Of Intro:

    2016-12-17

  • Manufacturer:

    Texas Instruments

  • YTEOL:

    15

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    328 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE

  • DS Breakdown Voltage-Min:

    40 V

  • Drain Current-Max (ID):

    200 A

  • Drain-source On Resistance-Max:

    0.0026 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    551 pF

  • JEDEC-95 Code:

    TO-263AB

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    2

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    400 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

CSD18510KTT Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the CSD18510KTT is -40°C to 150°C.
  • To ensure proper biasing, connect the gate-source voltage (Vgs) to a voltage source that is within the recommended range of 4.5V to 10V, and ensure the drain-source voltage (Vds) is within the recommended range of 10V to 30V.
  • To minimize parasitic inductance and capacitance, use a 4-layer PCB with a solid ground plane, and place the CSD18510KTT near the power source. Use short, wide traces for the drain and source connections, and avoid using vias under the device.
  • To protect the CSD18510KTT from ESD, use an ESD wrist strap or mat, and handle the device by the body or pins, not the leads. Store the device in an anti-static bag or wrap it in anti-static material.
  • The recommended gate resistor value for the CSD18510KTT is between 1 kΩ to 10 kΩ, depending on the specific application and switching frequency.

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CSD18510KTT Overview

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About Texas Instruments

Texas Instruments (TI) designs and manufactures semiconductors and integrated circuits for a wide range of applications. The company's product portfolio includes analog chips, which are essential for managing power and signal functions in electronic devices, and embedded processors, which serve as the brains in various systems, enabling functionality in everything from industrial equipment to consumer electronics. TI's innovations in semiconductor technology have made it a leader in the industry.

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Part Image CSD18510KTTT Texas Instruments

Power Field-Effect Transistor, 200A I(D), 40V, 0.0026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB