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CSD18510Q5B - Texas Instruments

Description: MOSFET 40-V, N channel NexFET power MOSFET, single SON 5 mm x 6 mm, 0.96 mOhm 8-VSON-CLIP -55 to 150

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CSD18510Q5B Details

  • Manufacturer Part Number:

    CSD18510Q5B

  • Brand Name:

    Texas Instruments

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Date Of Intro:

    2017-03-23

  • Manufacturer:

    Texas Instruments

  • YTEOL:

    15

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    328 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    40 V

  • Drain Current-Max (ID):

    300 A

  • Drain-source On Resistance-Max:

    0.0016 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    551 pF

  • JESD-30 Code:

    R-PDSO-N8

  • JESD-609 Code:

    e4

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    156 W

  • Pulsed Drain Current-Max (IDM):

    400 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Nickel/Palladium/Gold (Ni/Pd/Au)

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

CSD18510Q5B Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias under the device can help to dissipate heat efficiently. It's also recommended to keep the thermal path short and use a thermal pad on the bottom of the device.
  • The device requires a bias voltage of 5V ± 10% on the VCC pin, and the input voltage on the VIN pin should be within the recommended operating range. Additionally, ensure that the input and output capacitors are properly selected and placed close to the device.
  • A ceramic capacitor with a value of 10uF to 22uF and an X5R or X7R dielectric is recommended for the input capacitor. The capacitor should be placed as close as possible to the VIN pin.
  • The device has a built-in thermal shutdown feature that turns off the device when the junction temperature exceeds 150°C. To handle this, ensure proper thermal design and heat sinking, and consider adding a thermal monitoring circuit to detect and respond to thermal shutdown events.
  • A ceramic capacitor with a value of 10uF to 22uF and an X5R or X7R dielectric is recommended for the output capacitor. The capacitor should be placed as close as possible to the VOUT pin.

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CSD18510Q5B Overview

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To find more CAD model downloads similar to this part, try a partial part number search, like CSD18, or try a keyword search, such as Power Field-Effect Transistors

About Texas Instruments

Texas Instruments (TI) designs and manufactures semiconductors and integrated circuits for a wide range of applications. The company's product portfolio includes analog chips, which are essential for managing power and signal functions in electronic devices, and embedded processors, which serve as the brains in various systems, enabling functionality in everything from industrial equipment to consumer electronics. TI's innovations in semiconductor technology have made it a leader in the industry.

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Part Image CSD18510Q5BT Texas Instruments

Power Field-Effect Transistor, 300A I(D), 40V, 0.0016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET