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CSD18511Q5A - Texas Instruments

Description: MOSFETs 40-V N channel NexF ET power MOSFET si A 595-CSD18511Q5AT

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CSD18511Q5A - Texas Instruments PCB footprint - Other - Other - DQJ0008A
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CSD18511Q5A - Texas Instruments  - 3D model - Other - DQJ0008A
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CSD18511Q5A Details

  • Manufacturer Part Number:

    CSD18511Q5A

  • Brand Name:

    Texas Instruments

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Date Of Intro:

    2016-12-12

  • Manufacturer:

    Texas Instruments

  • YTEOL:

    15

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    157 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    40 V

  • Drain Current-Max (ID):

    159 A

  • Drain-source On Resistance-Max:

    0.0035 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    309 pF

  • JESD-30 Code:

    R-PDSO-N8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    400 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

CSD18511Q5A Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the CSD18511Q5A is -40°C to 150°C.
  • To ensure proper biasing, connect the gate-source voltage (VGS) to a voltage source that is within the recommended range of 1.5V to 5V, and ensure the drain-source voltage (VDS) is within the recommended range of 1.5V to 20V.
  • To minimize parasitic inductance, use a compact PCB layout with short, wide traces, and place the device close to the power source. Avoid using vias or narrow traces near the device.
  • To protect the CSD18511Q5A from ESD, use an ESD wrist strap or mat, and handle the device by the body or pins, avoiding direct contact with the die. Store the device in an anti-static bag or container.
  • The recommended gate resistor value for the CSD18511Q5A is typically in the range of 1 kΩ to 10 kΩ, depending on the specific application and switching frequency.

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CSD18511Q5A Overview

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About Texas Instruments

Texas Instruments (TI) designs and manufactures semiconductors and integrated circuits for a wide range of applications. The company's product portfolio includes analog chips, which are essential for managing power and signal functions in electronic devices, and embedded processors, which serve as the brains in various systems, enabling functionality in everything from industrial equipment to consumer electronics. TI's innovations in semiconductor technology have made it a leader in the industry.

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