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CSD18535KTT - Texas Instruments

Description: 60V, N ch NexFET MOSFET™, single D2PAK, 2mOhm

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PCB Footprints
CSD18535KTT - Texas Instruments PCB footprint - Other - Other - KTT-(R-PSFM-G3)
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3D Models
CSD18535KTT - Texas Instruments  - 3D model - Other - KTT-(R-PSFM-G3)
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CSD18535KTT Details

  • Manufacturer Part Number:

    CSD18535KTT

  • Brand Name:

    Texas Instruments

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Date Of Intro:

    2016-03-27

  • Manufacturer:

    Texas Instruments

  • YTEOL:

    15

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    616 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    200 A

  • Drain-source On Resistance-Max:

    0.0029 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    31 pF

  • JESD-30 Code:

    R-PSSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    2

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    400 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

CSD18535KTT Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the CSD18535KTT is -40°C to 150°C.
  • To ensure proper biasing, connect the gate-source voltage (VGS) to a voltage source that is within the recommended range (typically 4.5V to 10V) and ensure the drain-source voltage (VDS) is within the recommended range (typically 10V to 30V).
  • For optimal thermal performance, use a multi-layer PCB with a thermal pad connected to a heat sink or a thermal interface material. Ensure good thermal conductivity and minimal thermal resistance between the device and the heat sink.
  • Use a voltage regulator or a voltage limiter to prevent overvoltage conditions. Implement overcurrent protection using a current sense resistor and a comparator or a dedicated overcurrent protection IC.
  • Use a gate drive circuit with a high-current capability (e.g., a dedicated gate driver IC or a discrete transistor-based circuit) to ensure fast switching times and minimal power loss.

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CSD18535KTT Overview

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About Texas Instruments

Texas Instruments (TI) designs and manufactures semiconductors and integrated circuits for a wide range of applications. The company's product portfolio includes analog chips, which are essential for managing power and signal functions in electronic devices, and embedded processors, which serve as the brains in various systems, enabling functionality in everything from industrial equipment to consumer electronics. TI's innovations in semiconductor technology have made it a leader in the industry.

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