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CSD18535KTTT - Texas Instruments

Description: MOSFET 60-V, N channel NexFET power MOSFET, single D2PAK, 2 mOhm 3-DDPAK/TO-263 -55 to 175

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CSD18535KTTT - Texas Instruments PCB footprint - Other - Other - KTT (R-PSFM-G3)_2021
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CSD18535KTTT Details

  • Manufacturer Part Number:

    CSD18535KTTT

  • Brand Name:

    Texas Instruments

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Date Of Intro:

    2016-03-27

  • Manufacturer:

    Texas Instruments

  • YTEOL:

    15

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    616 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    200 A

  • Drain-source On Resistance-Max:

    0.0029 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    31 pF

  • JESD-30 Code:

    R-PSSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    2

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    400 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

CSD18535KTTT Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the CSD18535KTTT is -40°C to 150°C.
  • To ensure stability, it's essential to follow the recommended layout and component selection guidelines, including the use of a suitable output capacitor and a low-ESR input capacitor.
  • The recommended input capacitor value is 10uF to 22uF, with a low ESR (Equivalent Series Resistance) of less than 100mΩ.
  • Yes, the CSD18535KTTT is designed to handle high currents up to 3.5A. However, it's essential to ensure proper thermal management and follow the recommended PCB layout guidelines to prevent overheating.
  • The output voltage can be adjusted by using an external resistor divider network connected to the FB (Feedback) pin. The recommended resistor values can be calculated using the formula provided in the datasheet.

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CSD18535KTTT Overview

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About Texas Instruments

Texas Instruments (TI) designs and manufactures semiconductors and integrated circuits for a wide range of applications. The company's product portfolio includes analog chips, which are essential for managing power and signal functions in electronic devices, and embedded processors, which serve as the brains in various systems, enabling functionality in everything from industrial equipment to consumer electronics. TI's innovations in semiconductor technology have made it a leader in the industry.

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Part Image CSD18535KTT Texas Instruments

Power Field-Effect Transistor, 200A I(D), 60V, 0.0029ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET