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CSD18536KTTT - Texas Instruments

Description: MOSFETs 60-V N channel NexF ET power MOSFET si A 595-CSD18536KTT

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CSD18536KTTT - Texas Instruments PCB footprint - Other - Other - KTT0002A-2025
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CSD18536KTTT Details

  • Manufacturer Part Number:

    CSD18536KTTT

  • Brand Name:

    Texas Instruments

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Date Of Intro:

    2016-03-27

  • Manufacturer:

    Texas Instruments

  • YTEOL:

    15

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    819 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    200 A

  • Drain-source On Resistance-Max:

    0.0022 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    51 pF

  • JESD-30 Code:

    R-PSSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    2

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    375 W

  • Pulsed Drain Current-Max (IDM):

    400 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

CSD18536KTTT Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. Ensure a low-thermal-resistance path from the device to the heat sink or thermal pad.
  • Implement a robust thermal management system, including a heat sink, thermal interface material, and a cooling fan if necessary. Monitor the device's junction temperature (TJ) and adjust the system design accordingly.
  • Ensure identical devices, identical PCB layouts, and identical thermal management systems. Implement a master-slave configuration, and consider using a current-sharing bus to balance the current between devices.
  • Implement overcurrent protection (OCP) and overvoltage protection (OVP) circuits. Use a fuse or a current-sensing resistor to detect overcurrent conditions, and a voltage supervisor or a Zener diode to detect overvoltage conditions.
  • Use a dedicated gate driver IC or a discrete gate drive circuit with a low impedance output stage. Ensure a fast rise and fall time (<10 ns) and a high current capability (>1 A) to minimize switching losses.

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CSD18536KTTT Overview

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About Texas Instruments

Texas Instruments (TI) designs and manufactures semiconductors and integrated circuits for a wide range of applications. The company's product portfolio includes analog chips, which are essential for managing power and signal functions in electronic devices, and embedded processors, which serve as the brains in various systems, enabling functionality in everything from industrial equipment to consumer electronics. TI's innovations in semiconductor technology have made it a leader in the industry.

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Part Image CSD18536KTT Texas Instruments

Power Field-Effect Transistor, 200A I(D), 60V, 0.0022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET