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CSD18537NQ5A - Texas Instruments

Description: 60V, N ch NexFET MOSFET™, single SON5x6, 13mOhm

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PCB Footprints
CSD18537NQ5A - Texas Instruments PCB footprint - Other - Other - DQJ (CSD19531Q5AT)
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3D Models
CSD18537NQ5A - Texas Instruments  - 3D model - Other - DQJ (CSD19531Q5AT)
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CSD18537NQ5A Details

  • Manufacturer Part Number:

    CSD18537NQ5A

  • Brand Name:

    Texas Instruments

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Manufacturer:

    Texas Instruments

  • YTEOL:

    15

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    55 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    50 A

  • Drain-source On Resistance-Max:

    0.017 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    5.2 pF

  • JESD-30 Code:

    R-PDSO-N8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    75 W

  • Pulsed Drain Current-Max (IDM):

    151 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

CSD18537NQ5A Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. The device should be placed near a thermal pad or heat sink to dissipate heat efficiently.
  • The device requires a stable input voltage (VIN) and a bypass capacitor (CBYP) to ensure proper biasing. A 1-μF ceramic capacitor is recommended for CBYP. Additionally, the input voltage should be filtered to minimize noise and ripple.
  • The maximum allowed power dissipation for the CSD18537NQ5A is 2.5 W. Exceeding this limit may cause the device to overheat and reduce its lifespan.
  • A voltage supervisor or a voltage monitor can be used to detect overvoltage and undervoltage conditions. Additionally, a TVS diode or a zener diode can be used to clamp the input voltage to prevent damage from voltage spikes or surges.
  • The CSD18537NQ5A is designed to operate at frequencies up to 1 MHz. Operating the device at frequencies above 1 MHz may reduce its performance and increase power consumption.

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CSD18537NQ5A Overview

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About Texas Instruments

Texas Instruments (TI) designs and manufactures semiconductors and integrated circuits for a wide range of applications. The company's product portfolio includes analog chips, which are essential for managing power and signal functions in electronic devices, and embedded processors, which serve as the brains in various systems, enabling functionality in everything from industrial equipment to consumer electronics. TI's innovations in semiconductor technology have made it a leader in the industry.

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Part Image CSD18537NQ5AT Texas Instruments

Power Field-Effect Transistor, 50A I(D), 60V, 0.017ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET