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CSD19531Q5AT - Texas Instruments

Description: Texas Instruments CSD19531Q5AT N-channel MOSFET Transistor, 110 A, 100 V, 8-Pin VSON

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CSD19531Q5AT - Texas Instruments PCB footprint - Other - Other - DQJ (CSD19531Q5AT)
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CSD19531Q5AT - Texas Instruments  - 3D model - Other - DQJ (CSD19531Q5AT)
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CSD19531Q5AT Details

  • Manufacturer Part Number:

    CSD19531Q5AT

  • Brand Name:

    Texas Instruments

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Manufacturer:

    Texas Instruments

  • YTEOL:

    15

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    180 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    110 A

  • Drain-source On Resistance-Max:

    0.0078 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    16.9 pF

  • JESD-30 Code:

    R-PDSO-N8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    337 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

CSD19531Q5AT Frequently Asked Questions (FAQs)

  • A good PCB layout for the CSD19531Q5AT involves keeping the high-current paths short and wide, using multiple vias to connect the drain pad to the thermal pad, and placing the device close to the power source to minimize inductance.
  • Proper thermal management involves attaching a heat sink to the device, using thermal interface material to fill gaps, and ensuring good airflow around the device. The thermal pad should be connected to a solid copper plane on the PCB to dissipate heat efficiently.
  • When selecting a gate driver for the CSD19531Q5AT, consider the driver's output current capability, rise and fall times, and voltage rating. The driver should be able to provide a high current pulse to quickly charge the gate capacitance, and its output voltage should be compatible with the MOSFET's gate-source voltage rating.
  • To protect the CSD19531Q5AT, use a voltage regulator or a TVS diode to clamp the voltage, and consider adding a current sense resistor and a fuse or a current limiter to prevent overcurrent conditions. Additionally, ensure the device is operated within its safe operating area (SOA) to prevent damage from excessive voltage and current.
  • The CSD19531Q5AT has a unique combination of low on-resistance, high current capability, and a compact QFN package. It is designed for high-power applications such as server and telecom power supplies, and its performance is optimized for high-frequency switching. Compare the datasheet specifications and application notes to determine the best device for your specific application.

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CSD19531Q5AT Overview

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About Texas Instruments

Texas Instruments (TI) designs and manufactures semiconductors and integrated circuits for a wide range of applications. The company's product portfolio includes analog chips, which are essential for managing power and signal functions in electronic devices, and embedded processors, which serve as the brains in various systems, enabling functionality in everything from industrial equipment to consumer electronics. TI's innovations in semiconductor technology have made it a leader in the industry.

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