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CSD19532Q5BT - Texas Instruments

Description: MOSFET 100-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 4.9 mOhm 8-VSON-CLIP -55 to 150

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CSD19532Q5BT - Texas Instruments PCB footprint - Other - Other - Q5B
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CSD19532Q5BT Details

  • Manufacturer Part Number:

    CSD19532Q5BT

  • Brand Name:

    Texas Instruments

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Manufacturer:

    Texas Instruments

  • YTEOL:

    15

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    274 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    100 A

  • Drain-source On Resistance-Max:

    0.0057 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    18 pF

  • JESD-30 Code:

    R-PDSO-N8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    195 W

  • Pulsed Drain Current-Max (IDM):

    400 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

CSD19532Q5BT Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. Ensure a minimum of 1 oz copper thickness and a thermal relief pattern under the device.
  • Ensure the input voltage (VIN) is within the recommended range (4.5V to 18V). Use a stable voltage regulator and decouple the input with a 10uF capacitor. Also, ensure the output voltage (VOUT) is within the recommended range (0.8V to 3.3V).
  • A 10uF to 22uF ceramic capacitor (X5R or X7R dielectric) is recommended for input decoupling. Place the capacitor as close to the VIN pin as possible.
  • The thermal shutdown feature is activated when the junction temperature exceeds 150°C. Ensure proper heat sinking and thermal design to prevent overheating. If thermal shutdown occurs, the device will automatically recover when the junction temperature drops below 130°C.
  • A 10uF to 22uF ceramic capacitor (X5R or X7R dielectric) is recommended for output filtering. Place the capacitor as close to the VOUT pin as possible.

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CSD19532Q5BT Overview

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About Texas Instruments

Texas Instruments (TI) designs and manufactures semiconductors and integrated circuits for a wide range of applications. The company's product portfolio includes analog chips, which are essential for managing power and signal functions in electronic devices, and embedded processors, which serve as the brains in various systems, enabling functionality in everything from industrial equipment to consumer electronics. TI's innovations in semiconductor technology have made it a leader in the industry.

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Part Image CSD19532Q5B Texas Instruments

Power Field-Effect Transistor, 100A I(D), 100V, 0.0057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET