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CSD19534Q5A - Texas Instruments

Description: 100V, N ch NexFET MOSFET™, single SON5x6, 15.1mOhm

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CSD19534Q5A - Texas Instruments PCB footprint - Other - Other - DQJ (CSD19531Q5AT)
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CSD19534Q5A - Texas Instruments  - 3D model - Other - DQJ (CSD19531Q5AT)
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CSD19534Q5A Details

  • Manufacturer Part Number:

    CSD19534Q5A

  • Brand Name:

    Texas Instruments

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Manufacturer:

    Texas Instruments

  • YTEOL:

    15

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    55 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    44 A

  • Drain-source On Resistance-Max:

    0.0176 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    7.4 pF

  • JESD-30 Code:

    R-PDSO-N8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    137 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

CSD19534Q5A Frequently Asked Questions (FAQs)

  • The maximum SOA for the CSD19534Q5A is not explicitly stated in the datasheet. However, TI provides an SOA curve in the datasheet, which can be used to determine the maximum safe operating conditions. It's recommended to consult with TI's application notes and SOA calculation tools for more information.
  • To ensure proper thermal management, follow TI's recommended thermal design guidelines, including using a heat sink with a thermal interface material, ensuring good airflow, and keeping the device within its recommended operating temperature range (–55°C to 150°C).
  • The recommended gate drive voltage for the CSD19534Q5A is between 4.5V and 10V, with a typical value of 5V. However, the optimal gate drive voltage may vary depending on the specific application and switching frequency.
  • To minimize EMI, follow best practices for PCB design, such as using a solid ground plane, minimizing loop areas, and using shielding or filtering components. Additionally, consider using a gate driver with built-in EMI mitigation features.
  • The maximum allowed voltage transient for the CSD19534Q5A is not explicitly stated in the datasheet. However, TI recommends following the device's absolute maximum ratings and ensuring that the voltage transients do not exceed the maximum drain-source voltage (Vds) rating of 40V.

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About Texas Instruments

Texas Instruments (TI) designs and manufactures semiconductors and integrated circuits for a wide range of applications. The company's product portfolio includes analog chips, which are essential for managing power and signal functions in electronic devices, and embedded processors, which serve as the brains in various systems, enabling functionality in everything from industrial equipment to consumer electronics. TI's innovations in semiconductor technology have made it a leader in the industry.

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