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CSD19535KTTT - Texas Instruments

Description: Texas Instruments CSD19535KTTT N-channel MOSFET Transistor, 200 A, 100 V, 3-Pin DDPAK, TO-263

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PCB Footprints
CSD19535KTTT - Texas Instruments PCB footprint - Other - Other - KTT-(R-PSFM-G3)
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3D Models
CSD19535KTTT - Texas Instruments  - 3D model - Other - KTT-(R-PSFM-G3)
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CSD19535KTTT Details

  • Manufacturer Part Number:

    CSD19535KTTT

  • Brand Name:

    Texas Instruments

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Manufacturer:

    Texas Instruments

  • YTEOL:

    15

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    451 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    200 A

  • Drain-source On Resistance-Max:

    0.0041 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    38 pF

  • JEDEC-95 Code:

    TO-263AB

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    2

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    400 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

CSD19535KTTT Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. Ensure a minimum of 2 oz copper thickness and a thermal relief pattern under the device.
  • Ensure the input voltage is within the recommended range (4.5V to 18V). Use a high-quality voltage regulator and decoupling capacitors to minimize noise and ripple.
  • The maximum power dissipation is 1.5W. Ensure proper heat sinking and thermal management to prevent overheating.
  • Yes, the CSD19535KTTT is AEC-Q100 qualified and suitable for high-reliability and automotive applications. However, ensure compliance with specific industry standards and regulations.
  • Use proper ESD handling and storage procedures. Implement ESD protection circuits and follow recommended PCB design guidelines to minimize ESD susceptibility.

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CSD19535KTTT Overview

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About Texas Instruments

Texas Instruments (TI) designs and manufactures semiconductors and integrated circuits for a wide range of applications. The company's product portfolio includes analog chips, which are essential for managing power and signal functions in electronic devices, and embedded processors, which serve as the brains in various systems, enabling functionality in everything from industrial equipment to consumer electronics. TI's innovations in semiconductor technology have made it a leader in the industry.

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Power Field-Effect Transistor, 201A I(D), 100V, 0.0042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB