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CSD19538Q3A - Texas Instruments

Description: MOSFET 100-V, N channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 61 mOhm 8-VSONP -55 to 150

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CSD19538Q3A - Texas Instruments PCB footprint - Other - Other - DNH0008A
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CSD19538Q3A Details

  • Manufacturer Part Number:

    CSD19538Q3A

  • Brand Name:

    Texas Instruments

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Date Of Intro:

    2016-06-02

  • Manufacturer:

    Texas Instruments

  • YTEOL:

    15

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    8.1 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    15 A

  • Drain-source On Resistance-Max:

    0.072 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    16.4 pF

  • JESD-30 Code:

    R-PDSO-F5

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    23 W

  • Pulsed Drain Current-Max (IDM):

    36 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

CSD19538Q3A Frequently Asked Questions (FAQs)

  • A 4-layer PCB with a solid ground plane and a separate power plane is recommended. Keep the high-current paths short and use wide traces for the power lines. Decouple the device with a 10uF capacitor and a 100nF capacitor in parallel.
  • Use a thermal pad or thermal tape to attach the device to a heat sink or a metal plate. Ensure good airflow around the device and avoid blocking the airflow. The maximum junction temperature is 150°C.
  • A 10uF to 22uF X5R or X7R ceramic capacitor is recommended for the input. The capacitor should be placed as close to the VIN pin as possible.
  • Use a soft-start circuit or a current limiter to limit the inrush current. You can also use a NTC thermistor in series with the input to reduce the inrush current.
  • The maximum output capacitance is 220uF. Exceeding this value may cause instability or oscillations.

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CSD19538Q3A Overview

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About Texas Instruments

Texas Instruments (TI) designs and manufactures semiconductors and integrated circuits for a wide range of applications. The company's product portfolio includes analog chips, which are essential for managing power and signal functions in electronic devices, and embedded processors, which serve as the brains in various systems, enabling functionality in everything from industrial equipment to consumer electronics. TI's innovations in semiconductor technology have made it a leader in the industry.

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Part Image CSD19538Q3AT Texas Instruments

Power Field-Effect Transistor, 15A I(D), 100V, 0.072ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET