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CSD25304W1015T - Texas Instruments

Description: Texas Instruments CSD25304W1015T P-channel MOSFET Transistor, 3 A, 20 V, 6-Pin DSBGA

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CSD25304W1015T - Texas Instruments - PCB symbol
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CSD25304W1015T - Texas Instruments PCB footprint - BGA - BGA - yzc dsbga
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CSD25304W1015T - Texas Instruments - 3D model - BGA - yzc dsbga
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CSD25304W1015T Details

  • Manufacturer Part Number:

    CSD25304W1015T

  • Brand Name:

    Texas Instruments

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Mainland China, Philippines

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.21.00.95

  • Manufacturer:

    Texas Instruments

  • YTEOL:

    15

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    20 V

  • Drain Current-Max (ID):

    -3 A

  • Drain-source On Resistance-Max:

    0.092 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    15.6 pF

  • JESD-30 Code:

    R-XBGA-B6

  • JESD-609 Code:

    e1

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    UNSPECIFIED

  • Package Shape:

    RECTANGULAR

  • Package Style:

    GRID ARRAY

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation Ambient-Max:

    0.75 W

  • Power Dissipation-Max (Abs):

    0.75 W

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin/Silver/Copper (Sn/Ag/Cu)

  • Terminal Form:

    BALL

  • Terminal Position:

    BOTTOM

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

CSD25304W1015T Frequently Asked Questions (FAQs)

  • A good PCB layout for the CSD25304W1015T involves keeping the high-current paths short and wide, using multiple vias to connect the thermal pad to a solid ground plane, and placing the device near the power input to minimize inductance.
  • Proper thermal management involves attaching a heat sink to the device, using thermal interface material to fill gaps, and ensuring good airflow around the device. The thermal pad should be connected to a solid ground plane to help dissipate heat.
  • Exceeding the maximum junction temperature of 150°C can lead to reduced lifespan, increased thermal resistance, and potentially catastrophic failure of the device.
  • Use a voltage regulator or overvoltage protection circuit to prevent voltage exceeding the maximum rating of 15V. Implement overcurrent protection using a fuse or current-sensing resistor to prevent excessive current.
  • The recommended gate drive voltage for the CSD25304W1015T is between 4.5V and 15V, with a typical value of 10V to ensure proper switching and minimize power losses.

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CSD25304W1015T Overview

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About Texas Instruments

Texas Instruments (TI) designs and manufactures semiconductors and integrated circuits for a wide range of applications. The company's product portfolio includes analog chips, which are essential for managing power and signal functions in electronic devices, and embedded processors, which serve as the brains in various systems, enabling functionality in everything from industrial equipment to consumer electronics. TI's innovations in semiconductor technology have made it a leader in the industry.

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Part Image CSD25304W1015 Texas Instruments

Small Signal Field-Effect Transistor, -3A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET