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CSD87503Q3E - Texas Instruments

Description: MOSFET 30-V Dual N-Channel MOSFET

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CSD87503Q3E - Texas Instruments PCB footprint - Other - Other - DTD0008A
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CSD87503Q3E - Texas Instruments  - 3D model - Other - DTD0008A
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CSD87503Q3E Details

  • Manufacturer Part Number:

    CSD87503Q3E

  • Brand Name:

    Texas Instruments

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Date Of Intro:

    2017-09-13

  • Manufacturer:

    Texas Instruments

  • YTEOL:

    15

  • Case Connection:

    DRAIN

  • Configuration:

    COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    10 A

  • Drain-source On Resistance-Max:

    0.0219 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    194 pF

  • JESD-30 Code:

    S-PDSO-N6

  • JESD-609 Code:

    e4

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    15.6 W

  • Pulsed Drain Current-Max (IDM):

    89 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Nickel/Palladium/Gold (Ni/Pd/Au)

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

CSD87503Q3E Frequently Asked Questions (FAQs)

  • TI provides a recommended PCB layout in the datasheet, but it's essential to follow good layout practices, such as keeping the high-current paths short, using thick copper traces, and minimizing inductance. Additionally, ensure the thermal pad is connected to a solid ground plane to improve heat dissipation.
  • The input capacitor values depend on the input voltage, output voltage, and desired ripple current. TI recommends using X7R or X5R ceramic capacitors with a minimum capacitance of 10uF. A good starting point is to use 22uF or 33uF capacitors, and then adjust based on the specific application requirements.
  • The maximum allowed junction temperature (Tj) for the CSD87503Q3E is 150°C. However, it's recommended to keep the junction temperature below 125°C for optimal reliability and performance.
  • Proper thermal management is crucial for the CSD87503Q3E. Ensure the device is mounted on a heat sink or a thermal pad, and the PCB is designed to dissipate heat efficiently. Use thermal interface materials (TIMs) to improve heat transfer between the device and the heat sink.
  • Not using a bootstrap capacitor can lead to reduced performance, increased power losses, and potential device damage. The bootstrap capacitor helps to generate the necessary gate drive voltage for the high-side FET. Without it, the device may not function correctly or may experience premature failure.

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About Texas Instruments

Texas Instruments (TI) designs and manufactures semiconductors and integrated circuits for a wide range of applications. The company's product portfolio includes analog chips, which are essential for managing power and signal functions in electronic devices, and embedded processors, which serve as the brains in various systems, enabling functionality in everything from industrial equipment to consumer electronics. TI's innovations in semiconductor technology have made it a leader in the industry.

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