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CSD88539ND - Texas Instruments

Description: TEXAS INSTRUMENTS - CSD88539ND - MOSFET, DUAL N CHANNEL, 60V, 15A, SOIC

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CSD88539ND - Texas Instruments PCB footprint - Small Outline Packages - Small Outline Packages - SO-8 Package
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CSD88539ND - Texas Instruments  - 3D model - Small Outline Packages - SO-8 Package
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CSD88539ND Details

  • Manufacturer Part Number:

    CSD88539ND

  • Brand Name:

    Texas Instruments

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Mainland China, Malaysia, Mexico, Philippines

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Manufacturer:

    Texas Instruments

  • YTEOL:

    15

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    24 mJ

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    15 A

  • Drain-source On Resistance-Max:

    0.034 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    2.6 pF

  • JEDEC-95 Code:

    MS-012AA

  • JESD-30 Code:

    R-PDSO-G8

  • JESD-609 Code:

    e4

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    2.1 W

  • Pulsed Drain Current-Max (IDM):

    46 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Nickel/Palladium/Gold (Ni/Pd/Au)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

CSD88539ND Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the CSD88539ND is -40°C to 150°C.
  • To ensure proper biasing, connect the VCC pin to a stable 12V power supply, and the VEE pin to a stable -5V power supply. Additionally, decouple the power supplies with 10uF capacitors to minimize noise.
  • To minimize EMI and thermal issues, use a 4-layer PCB with a solid ground plane, and place the CSD88539ND near the power supply. Use thermal vias to dissipate heat, and keep the PCB layout symmetrical to reduce EMI.
  • Use a voltage regulator to regulate the input voltage, and add overvoltage protection (OVP) and overcurrent protection (OCP) circuits to prevent damage from voltage spikes and excessive current.
  • Use a heatsink with a thermal resistance of 1°C/W or lower, and ensure the heatsink is properly attached to the CSD88539ND using a thermal interface material (TIM).

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CSD88539ND Overview

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About Texas Instruments

Texas Instruments (TI) designs and manufactures semiconductors and integrated circuits for a wide range of applications. The company's product portfolio includes analog chips, which are essential for managing power and signal functions in electronic devices, and embedded processors, which serve as the brains in various systems, enabling functionality in everything from industrial equipment to consumer electronics. TI's innovations in semiconductor technology have made it a leader in the industry.

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Part Image CSD88539NDT Texas Instruments

Power Field-Effect Transistor, 15A I(D), 60V, 0.034ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA