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CSD88539NDT - Texas Instruments

Description: 60-V Dual N-Channel NexFET Power MOSFET, CSD88539ND

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CSD88539NDT Details

  • Manufacturer Part Number:

    CSD88539NDT

  • Brand Name:

    Texas Instruments

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Manufacturer:

    Texas Instruments

  • YTEOL:

    15

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    24 mJ

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    15 A

  • Drain-source On Resistance-Max:

    0.034 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    2.6 pF

  • JEDEC-95 Code:

    MS-012AA

  • JESD-30 Code:

    R-PDSO-G8

  • JESD-609 Code:

    e4

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    2.1 W

  • Pulsed Drain Current-Max (IDM):

    46 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Nickel/Palladium/Gold (Ni/Pd/Au)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

CSD88539NDT Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the CSD88539NDT is -40°C to 150°C.
  • To ensure stability, it's recommended to use a minimum output capacitance of 10uF, and a maximum ESR of 1 ohm. Additionally, the input capacitance should be at least 10uF with an ESR of 1 ohm or less.
  • To minimize noise and EMI, it's recommended to use a 4-layer PCB with a solid ground plane, and to keep the input and output capacitors close to the device. Additionally, use a Kelvin connection for the output voltage sense lines, and keep the high-current paths short and wide.
  • The power dissipation of the CSD88539NDT can be calculated using the formula: Pd = (Vin - Vout) x Iout x Efficiency. The efficiency can be obtained from the datasheet or by measuring the device's power consumption.
  • The recommended input capacitor type for the CSD88539NDT is a low-ESR ceramic capacitor, such as an X5R or X7R dielectric, with a voltage rating of at least 1.5 times the maximum input voltage.

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CSD88539NDT Overview

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About Texas Instruments

Texas Instruments (TI) designs and manufactures semiconductors and integrated circuits for a wide range of applications. The company's product portfolio includes analog chips, which are essential for managing power and signal functions in electronic devices, and embedded processors, which serve as the brains in various systems, enabling functionality in everything from industrial equipment to consumer electronics. TI's innovations in semiconductor technology have made it a leader in the industry.

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Part Image CSD88539ND Texas Instruments

Power Field-Effect Transistor, 15A I(D), 60V, 0.034ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA