DDB6U180N16RRB37BOSA1 footprint, schematic symbol and 3D model by Infineon

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DDB6U180N16RRB37BOSA1 Details

Manufacturer Part Number:
DDB6U180N16RRB37BOSA1
Rohs Code:
Yes
Part Life Cycle Code:
Not Recommended
Package Description:
MODULE-29
ECCN Code:
EAR99
Manufacturer:
Infineon Technologies AG
YTEOL:
3
Case Connection:
ISOLATED
Collector-Emitter Voltage-Max:
1200 V
Configuration:
SINGLE WITH BUILT-IN DIODE, THREE PHASE DIODE BRIDGE AND THERMISTOR
JESD-30 Code:
R-XUFM-X29
Number of Elements:
1
Number of Terminals:
29
Operating Temperature-Min:
-40 °C
Package Body Material:
UNSPECIFIED
Package Shape:
RECTANGULAR
Package Style:
FLANGE MOUNT
Peak Reflow Temperature (Cel):
NOT SPECIFIED
Polarity/Channel Type:
N-CHANNEL
Reference Standard:
UL RECOGNIZED
Surface Mount:
NO
Terminal Form:
UNSPECIFIED
Terminal Position:
UPPER
Time@Peak Reflow Temperature-Max (s):
NOT SPECIFIED
Transistor Application:
POWER CONTROL
Transistor Element Material:
SILICON
Turn-off Time-Nom (toff):
620 ns
Turn-on Time-Nom (ton):
210 ns

The thermal resistance (Rth) of the DDB6U180N16RRB37BOSA1 is typically around 0.5 K/W (junction to case) and 1.5 K/W (junction to ambient) at a maximum junction temperature of 150°C.
To ensure reliability, follow the recommended operating conditions, use a suitable thermal management system, and consider derating the device's power handling capability at higher temperatures. Additionally, ensure proper PCB design, layout, and assembly to minimize thermal resistance and electrical stress.
The recommended gate drive voltage for the DDB6U180N16RRB37BOSA1 is between 10 V and 15 V, with a maximum gate-source voltage of ±20 V. A higher gate drive voltage can improve switching performance, but may also increase power losses and EMI.
Yes, the DDB6U180N16RRB37BOSA1 can be used in a parallel configuration to increase power handling. However, it's essential to ensure that the devices are properly matched, and the gate drive signals are synchronized to minimize current imbalance and oscillations.
The maximum allowed dv/dt for the DDB6U180N16RRB37BOSA1 is 10 kV/μs. Exceeding this value can lead to premature aging or failure of the device.

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