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DF100R07W1H5FPB53BPSA2 - Infineon

Description: IGBT Module Trench Field Stop 2 Independent 650 V 40 A 20 mW Chassis Mount Module

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DF100R07W1H5FPB53BPSA2 - Infineon PCB footprint - Other - Other - DF100R07W1H5FPB53BPSA2-2
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DF100R07W1H5FPB53BPSA2 Details

  • Manufacturer Part Number:

    DF100R07W1H5FPB53BPSA2

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Germany, Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    14 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    5.35

  • Case Connection:

    ISOLATED

  • Collector Current-Max (IC):

    40 A

  • Collector-Emitter Voltage-Max:

    650 V

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

  • JESD-30 Code:

    R-XUFM-X26

  • Number of Elements:

    2

  • Number of Terminals:

    26

  • Operating Temperature-Min:

    -40 °C

  • Package Body Material:

    UNSPECIFIED

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Surface Mount:

    NO

  • Terminal Form:

    UNSPECIFIED

  • Terminal Position:

    UPPER

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    40 ns

  • Turn-on Time-Nom (ton):

    17 ns

DF100R07W1H5FPB53BPSA2 Frequently Asked Questions (FAQs)

  • The thermal resistance (Rth) of the DF100R07W1H5FPB53BPSA2 is typically around 0.5 K/W (junction-to-case) and 1.5 K/W (junction-to-ambient) when mounted on a standard PCB.
  • To ensure reliability, follow the recommended operating temperature range (TJ) of -40°C to 175°C, and consider using a heat sink or thermal interface material to reduce thermal resistance. Also, ensure proper PCB design, layout, and thermal management.
  • The recommended gate drive voltage for the DF100R07W1H5FPB53BPSA2 is typically between 10 V and 15 V, with a maximum gate-source voltage (VGS) of ±20 V.
  • Yes, the DF100R07W1H5FPB53BPSA2 can be used in a parallel configuration to increase power handling. However, ensure that the devices are properly matched, and the gate drive and layout are designed to minimize differences in switching times and thermal performance.
  • Follow Infineon's recommended PCB layout guidelines, including using a solid ground plane, minimizing trace inductance, and ensuring proper decoupling and filtering. Also, consider using a thermal via or heat sink to improve thermal performance.

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DF100R07W1H5FPB53BPSA2 Overview

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Part Image DF100R07W1H5FP_B53 Infineon Technologies AG

Insulated Gate Bipolar Transistor, 40A I(C), 650V V(BR)CES, N-Channel