Part Image

DMC3026LSD-13 - Diodes Incorporated

Description: Diodes Inc DMC3026LSD-13 Dual N/P-channel MOSFET Transistor, 8.2 A, 30 V, 8-Pin SO

Download DMC3026LSD-13 Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
DMC3026LSD-13 - Diodes Incorporated PCB footprint - Small Outline Packages - Small Outline Packages - SO-8
click to zoom
3D Models
DMC3026LSD-13 - Diodes Incorporated  - 3D model - Small Outline Packages - SO-8
click to zoom

DMC3026LSD-13 Details

  • Manufacturer Part Number:

    DMC3026LSD-13

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    SOP-8

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    24 Weeks

  • Manufacturer:

    Diodes Incorporated

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    10.5 mJ

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    6.5 A

  • Drain-source On Resistance-Max:

    0.025 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    51 pF

  • JESD-30 Code:

    R-PDSO-G8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL AND P-CHANNEL

  • Power Dissipation-Max (Abs):

    1.6 W

  • Pulsed Drain Current-Max (IDM):

    40 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

DMC3026LSD-13 Frequently Asked Questions (FAQs)

  • Diodes Incorporated recommends a thermal pad on the bottom of the package, connected to a large copper area on the PCB to dissipate heat efficiently. A minimum of 2oz copper thickness is recommended.
  • The DMC3026LSD-13 requires a bias voltage of 2.5V to 5.5V on the VCC pin, and the input signals should be biased around the midpoint of the supply voltage to ensure optimal performance.
  • The DMC3026LSD-13 is designed to operate up to 100 MHz, but the actual frequency limit may vary depending on the specific application and PCB layout.
  • The DMC3026LSD-13 has built-in ESD protection, but it's still recommended to follow proper ESD handling procedures during assembly and testing to prevent damage.
  • The recommended input signal amplitude is 1V to 2V, and the input impedance should be matched to 50 ohms to ensure optimal signal integrity.

Trust Checks

This model has been provided by community users.
Community Provided
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

DMC3026LSD-13 Overview

Use the download button to access the DMC3026LSD-13 schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like DMC30, or try a keyword search, such as Power Field-Effect Transistors

Parts related to DMC3026LSD-13

Showing 0 results

DMC3026LSD-13 Alternates

Showing results

Image Part Number Model
Part Image FDS8958B onsemi

Power Field-Effect Transistor, 6.4A I(D), 30V, 0.026ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

Part Image APM4550KC-TRL American Power Devices Inc

Power Field-Effect Transistor, 7A I(D), 30V, 0.0275ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET