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DMN2008LFU-13 - Diodes Incorporated

Description: Dual N-Channel Enhancement Mode MOSFET

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DMN2008LFU-13 - Diodes Incorporated  - 3D model
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DMN2008LFU-13 Details

  • Manufacturer Part Number:

    DMN2008LFU-13

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    U-DFN2030-6, 6 PIN

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    28 Weeks

  • Manufacturer:

    Diodes Incorporated

  • YTEOL:

    7

  • Case Connection:

    DRAIN

  • Configuration:

    COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    20 V

  • Drain Current-Max (ID):

    14.5 A

  • Drain-source On Resistance-Max:

    0.0096 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-N6

  • JESD-609 Code:

    e4

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Surface Mount:

    YES

  • Terminal Finish:

    NICKEL PALLADIUM GOLD

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

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