Part Image

DMN2112SN-7 - Diodes Incorporated

Description: Diodes Inc DMN2112SN-7 N-channel MOSFET Transistor, 4 A, 20 V, 3-Pin SC-59

Download DMN2112SN-7 Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
DMN2112SN-7 - Diodes Incorporated PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - 3 SC59
click to zoom
3D Models
DMN2112SN-7 - Diodes Incorporated  - 3D model - SOT23 (3-Pin) - 3 SC59
click to zoom

DMN2112SN-7 Details

  • Manufacturer Part Number:

    DMN2112SN-7

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    SC-59

  • Package Description:

    SC-59, 3 PIN

  • Pin Count:

    3

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.21.00.95

  • Manufacturer:

    Diodes Incorporated

  • YTEOL:

    0

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    20 V

  • Drain Current-Max (ID):

    1.2 A

  • Drain-source On Resistance-Max:

    0.1 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    45 pF

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Packing Method:

    TR

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation Ambient-Max:

    0.5 W

  • Power Dissipation-Max (Abs):

    0.5 W

  • Qualification Status:

    Not Qualified

  • Reference Standard:

    MIL-STD-202

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

DMN2112SN-7 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the DMN2112SN-7 is -55°C to 150°C.
  • Yes, the DMN2112SN-7 is lead-free and RoHS compliant, making it suitable for use in environmentally friendly designs.
  • The typical turn-on time for the DMN2112SN-7 is around 10-20 ns, depending on the specific application and operating conditions.
  • Yes, the DMN2112SN-7 is suitable for high-frequency applications up to 1 GHz, making it a good choice for RF and microwave designs.
  • Yes, the DMN2112SN-7 is available in a Pb-free package, making it suitable for use in environmentally friendly designs.

Trust Checks

This model has been provided by community users.
Community Provided
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

DMN2112SN-7 Overview

Use the download button to access the DMN2112SN-7 schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like DMN21, or try a keyword search, such as Small Signal Field-Effect Transistors

Parts related to DMN2112SN-7

Showing 0 results

DMN2112SN-7 Alternates

Showing results

Image Part Number Model
Part Image IRLML2402TRPBF International Rectifier

Small Signal Field-Effect Transistor, 1.2A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB

Part Image IRLML2402GTRPBF International Rectifier

Small Signal Field-Effect Transistor, 1.2A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB

Part Image IRLML2402GPBF Infineon Technologies AG

Small Signal Field-Effect Transistor, 1.2A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB

Part Image IRLML2402 International Rectifier

Small Signal Field-Effect Transistor, 1.2A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB