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IRLML2402GTRPBF - Infineon

Description: Generation V Technology Ultra low On-resistance N-channel MOSFET SOT-23 footprint low profile Available in Tape and Reel Fast Switchubg Halogen-free

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PCB Footprints
IRLML2402GTRPBF - Infineon PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - Micro3(SOT-23)
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IRLML2402GTRPBF - Infineon  - 3D model - SOT23 (3-Pin) - Micro3(SOT-23)
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IRLML2402GTRPBF Details

  • Manufacturer Part Number:

    IRLML2402GTRPBF

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Additional Feature:

    HIGH RELIABILITY

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    20 V

  • Drain Current-Max (ID):

    1.2 A

  • Drain-source On Resistance-Max:

    0.25 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-236AB

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    0.54 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRLML2402GTRPBF Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IRLML2402GTRPBF is -55°C to 150°C.
  • To ensure reliability, it's essential to follow proper thermal management practices, such as providing adequate heat sinking, using thermal interface materials, and minimizing thermal resistance.
  • For optimal performance, it's recommended to follow Infineon's guidelines for PCB layout and design, including using a solid ground plane, minimizing trace lengths, and using a low-ESR capacitor for decoupling.
  • To prevent ESD damage, it's essential to follow proper handling and storage procedures, such as using ESD-safe materials, grounding oneself before handling the device, and using ESD protection devices in the circuit.
  • The recommended gate drive circuits for the IRLML2402GTRPBF include using a dedicated gate driver IC, such as the Infineon 1EDF7131, and following Infineon's application notes for gate drive circuit design.

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IRLML2402GTRPBF Overview

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Small Signal Field-Effect Transistor, 1.2A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB

Part Image IRLML2402GTRPBF International Rectifier

Small Signal Field-Effect Transistor, 1.2A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB

Part Image IRLML2402TRPBF International Rectifier

Small Signal Field-Effect Transistor, 1.2A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB

Part Image IRLML2402GPBF Infineon Technologies AG

Small Signal Field-Effect Transistor, 1.2A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB