Part Image

DMN3035LWN-7 - Diodes Incorporated

Description: MOSFETs N-Ch 30V Dual Enh 30Vgss 0.77W 399pF

Download DMN3035LWN-7 Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
DMN3035LWN-7 - Diodes Incorporated PCB footprint - Other - Other - V-DFN3020-8 (Type N)
click to zoom
3D Models
DMN3035LWN-7 - Diodes Incorporated  - 3D model - Other - V-DFN3020-8 (Type N)
click to zoom

DMN3035LWN-7 Details

  • Manufacturer Part Number:

    DMN3035LWN-7

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    V-DFN3020-8, 8 PIN

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    12 Weeks

  • Manufacturer:

    Diodes Incorporated

  • YTEOL:

    7

  • Case Connection:

    DRAIN

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    5.5 A

  • Drain-source On Resistance-Max:

    0.035 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-N6

  • JESD-609 Code:

    e4

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Surface Mount:

    YES

  • Terminal Finish:

    Nickel/Palladium/Gold (Ni/Pd/Au)

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

DMN3035LWN-7 Frequently Asked Questions (FAQs)

  • Diodes Incorporated recommends a PCB layout with a thermal pad connected to a large copper area on the bottom layer, and multiple vias to dissipate heat efficiently.
  • To ensure proper biasing, follow the recommended operating conditions in the datasheet, and use a voltage regulator or a resistive divider network to set the gate-source voltage (Vgs) within the specified range.
  • Handle the device by the body, avoid touching the pins, and store it in an anti-static bag or a conductive foam tray to prevent electrostatic discharge (ESD) damage.
  • Yes, the DMN3035LWN-7 is suitable for high-frequency switching applications up to 1 MHz, but ensure proper PCB layout, decoupling, and gate drive design to minimize ringing and losses.
  • Calculate the maximum power dissipation using the device's thermal resistance (RθJA), junction temperature (Tj), and ambient temperature (Ta), and ensure it does not exceed the recommended value in the datasheet.

Trust Checks

This model has been built in collaboration with the manufacturer.
Manufacturer Collaborated
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

DMN3035LWN-7 Overview

Use the download button to access the DMN3035LWN-7 schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like DMN30, or try a keyword search, such as Small Signal Field-Effect Transistors

Parts related to DMN3035LWN-7

Showing 0 results