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DMN3401LDW-13 - Diodes Incorporated

Description: MOSFET MOSFET BVDSS: 25V-30V

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PCB Footprints
DMN3401LDW-13 - Diodes Incorporated PCB footprint - SOT23 (6-Pin) - SOT23 (6-Pin) - SOT-363
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3D Models
DMN3401LDW-13 - Diodes Incorporated  - 3D model - SOT23 (6-Pin) - SOT-363
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DMN3401LDW-13 Details

  • Manufacturer Part Number:

    DMN3401LDW-13

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    12 Weeks

  • Manufacturer:

    Diodes Incorporated

  • YTEOL:

    7

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    0.8 A

  • Drain-source On Resistance-Max:

    0.4 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    10 pF

  • JESD-30 Code:

    R-PDSO-G6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    0.35 W

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

DMN3401LDW-13 Frequently Asked Questions (FAQs)

  • The recommended operating voltage range for the DMN3401LDW-13 is 2.5V to 5.5V.
  • To ensure proper biasing, connect the gate to a voltage source through a resistor, and connect the source to ground through a resistor. The recommended biasing voltage is typically around 1/3 to 1/2 of the supply voltage.
  • The maximum power dissipation for the DMN3401LDW-13 is 1.4W. It's essential to ensure the device is properly heat-sinked to prevent overheating.
  • The DMN3401LDW-13 is designed as a low-threshold voltage MOSFET, making it suitable for switching applications. However, it can also be used as a linear amplifier, but with reduced performance and efficiency.
  • To prevent electrostatic discharge (ESD) damage, handle the device by the body or use an anti-static wrist strap. Ensure the workspace and equipment are also ESD-protected.

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DMN3401LDW-13 Overview

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