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DMN60H080DS-13 - Diodes Incorporated

Description: MOSFET MOSFETBVDSS: 501V-650V

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DMN60H080DS-13 - Diodes Incorporated PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - DMN60H080DS-13
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3D Models
DMN60H080DS-13 - Diodes Incorporated  - 3D model - SOT23 (3-Pin) - DMN60H080DS-13
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DMN60H080DS-13 Details

  • Manufacturer Part Number:

    DMN60H080DS-13

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    12 Weeks

  • Manufacturer:

    Diodes Incorporated

  • YTEOL:

    7

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    0.07 A

  • Drain-source On Resistance-Max:

    290 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

DMN60H080DS-13 Frequently Asked Questions (FAQs)

  • The recommended PCB layout for optimal thermal performance involves using a large copper area for heat dissipation, keeping the component away from thermal obstacles, and using thermal vias to dissipate heat to the bottom layer.
  • To ensure the device is properly biased, follow the recommended biasing circuit and voltage levels specified in the datasheet, and ensure the input and output capacitors are properly selected and placed.
  • Monitor the device's junction temperature (Tj), case temperature (Tc), and thermal resistance (Rth) to prevent overheating. Also, ensure the device is operated within the recommended operating conditions and derating guidelines.
  • The DMN60H080DS-13 is an industrial-grade device, but it may not meet the specific requirements for high-reliability or automotive applications. Check the device's qualification and certification status, and consult with Diodes Incorporated for specific guidance.
  • Follow proper ESD handling and assembly procedures, such as using ESD-safe materials, grounding straps, and ionizers. Ensure that the device is properly packaged and stored in ESD-protective packaging.

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DMN60H080DS-13 Overview

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