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DMN60H080DS-7 - Diodes Incorporated

Description: N-CHANNEL ENHANCEMENT MODE FIELD MOSFET

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DMN60H080DS-7 - Diodes Incorporated PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - DMN60H080DS-7
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DMN60H080DS-7 - Diodes Incorporated  - 3D model - SOT23 (3-Pin) - DMN60H080DS-7
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DMN60H080DS-7 Details

  • Manufacturer Part Number:

    DMN60H080DS-7

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    12 Weeks

  • Manufacturer:

    Diodes Incorporated

  • YTEOL:

    7

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    0.07 A

  • Drain-source On Resistance-Max:

    290 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

DMN60H080DS-7 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for DMN60H080DS-7 is a standard SOT223 package with a minimum pad size of 2.5mm x 2.5mm and a thermal pad size of 3.5mm x 3.5mm.
  • To ensure reliability in high-temperature applications, ensure that the device is operated within the recommended junction temperature range (TJ) of -55°C to 150°C, and provide adequate heat sinking and thermal management.
  • The maximum allowed voltage on the input pins of DMN60H080DS-7 is 80V, as specified in the datasheet. Exceeding this voltage may damage the device.
  • Yes, DMN60H080DS-7 can be used in switching regulator applications due to its high switching frequency capability and low RDS(on). However, ensure that the device is operated within the recommended switching frequency range and that adequate heat sinking is provided.
  • To protect DMN60H080DS-7 from ESD, handle the device with anti-static wrist straps, mats, or bags, and ensure that the PCB is designed with ESD protection in mind, such as using ESD diodes or resistors.

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DMN60H080DS-7 Overview

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