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DMN62D1LFD-7 - Diodes Incorporated

Description: Diodes Inc DMN62D1LFD-7 N-channel MOSFET Transistor, 0.4 A, 60 V, 3-Pin X1-DFN

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DMN62D1LFD-7 - Diodes Incorporated PCB footprint - Other - Other - U-DFN1212-3 (Type C)_1
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DMN62D1LFD-7 - Diodes Incorporated  - 3D model - Other - U-DFN1212-3 (Type C)_1
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DMN62D1LFD-7 Details

  • Manufacturer Part Number:

    DMN62D1LFD-7

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    U-DFN1212-3, 3 PIN

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    12 Weeks

  • Manufacturer:

    Diodes Incorporated

  • YTEOL:

    7

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    0.4 A

  • Drain-source On Resistance-Max:

    2 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    3.6 pF

  • JESD-30 Code:

    S-PDSO-N3

  • JESD-609 Code:

    e4

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    0.5 W

  • Reference Standard:

    MIL-STD-202

  • Surface Mount:

    YES

  • Terminal Finish:

    Nickel/Palladium/Gold (Ni/Pd/Au)

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

DMN62D1LFD-7 Frequently Asked Questions (FAQs)

  • The recommended footprint and land pattern for DMN62D1LFD-7 can be found in the Diodes Incorporated's application note AN-111, which provides guidelines for PCB layout and assembly.
  • To ensure reliability in high-temperature applications, it is recommended to follow the derating guidelines provided in the datasheet, and to consider using a heat sink or thermal interface material to reduce the junction temperature.
  • The maximum allowable power dissipation for DMN62D1LFD-7 is dependent on the ambient temperature and the thermal resistance of the device. Refer to the thermal characteristics section in the datasheet for more information.
  • Yes, DMN62D1LFD-7 can be used in switching applications, but it is recommended to follow the switching characteristics and safe operating area (SOA) guidelines provided in the datasheet to ensure reliable operation.
  • To protect the DMN62D1LFD-7 from ESD, it is recommended to follow proper handling and storage procedures, and to use ESD protection devices such as TVS diodes or ESD suppressors in the circuit design.

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DMN62D1LFD-7 Overview

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