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DMN62D1SFB-7B - Diodes Incorporated

Description: DIODES INC. - DMN62D1SFB-7B - Power MOSFET, N Channel, 60 V, 410 mA, 1.4 ohm, X1-DFN1006, Surface Mount

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DMN62D1SFB-7B - Diodes Incorporated PCB footprint - Other - Other - U-DFN1006-3/SWP
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DMN62D1SFB-7B - Diodes Incorporated  - 3D model - Other - U-DFN1006-3/SWP
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DMN62D1SFB-7B Details

  • Manufacturer Part Number:

    DMN62D1SFB-7B

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    DFN

  • Package Description:

    GREEN, ULTRA SMALL, PLASTIC, DFN1006-3, 3 PIN

  • Pin Count:

    3

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    12 Weeks

  • Manufacturer:

    Diodes Incorporated

  • YTEOL:

    6

  • Additional Feature:

    HIGH RELIABILITY

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    0.41 A

  • Drain-source On Resistance-Max:

    1.4 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PBCC-N3

  • JESD-609 Code:

    e4

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    CHIP CARRIER

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    0.47 W

  • Surface Mount:

    YES

  • Terminal Finish:

    Nickel/Palladium/Gold (Ni/Pd/Au)

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    BOTTOM

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

DMN62D1SFB-7B Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the DMN62D1SFB-7B is a standard SOT23-6 package with a 1.5mm x 1.5mm body size and a 0.5mm pitch. The datasheet provides a recommended land pattern and soldering guidelines.
  • To ensure proper biasing, follow the recommended operating conditions and biasing circuits provided in the datasheet. Typically, a voltage regulator or a voltage divider network is used to set the input voltage and current limits. Additionally, ensure that the input and output capacitors are properly selected and placed close to the device.
  • The DMN62D1SFB-7B has a thermal junction-to-ambient resistance (RθJA) of 125°C/W. To ensure reliable operation, maintain a maximum junction temperature of 150°C. Use thermal design and simulation tools to optimize the PCB layout and thermal management. Consider using thermal vias, heat sinks, or thermal interface materials to reduce thermal resistance.
  • The DMN62D1SFB-7B has an integrated ESD protection circuit, but additional protection measures may be necessary depending on the application. Follow proper ESD handling and storage procedures, and consider adding external ESD protection devices or circuits to ensure the device is protected from electrostatic discharge.
  • The DMN62D1SFB-7B is manufactured by Diodes Incorporated, which adheres to industry-standard quality and reliability standards, including ISO 9001, IATF 16949, and AEC-Q100. The device is also qualified to meet automotive and industrial reliability standards.

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DMN62D1SFB-7B Overview

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