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DMNH10H028SCT - Diodes Incorporated

Description: MOSFETs MOSFET BVDSS: 61V-100V

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DMNH10H028SCT - Diodes Incorporated  - 3D model
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DMNH10H028SCT Details

  • Manufacturer Part Number:

    DMNH10H028SCT

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    12 Weeks

  • Manufacturer:

    Diodes Incorporated

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    37 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    60 A

  • Drain-source On Resistance-Max:

    0.028 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    47 pF

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    2.8 W

  • Pulsed Drain Current-Max (IDM):

    90 A

  • Reference Standard:

    MIL-STD-202

  • Surface Mount:

    NO

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

DMNH10H028SCT Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for DMNH10H028SCT is a standard SOT23 package with a minimum pad size of 0.8mm x 0.8mm and a thermal pad size of 2.5mm x 2.5mm.
  • To ensure proper biasing, connect the gate to a voltage source through a suitable resistor (e.g., 1kΩ) and ensure the drain-source voltage is within the recommended range (typically 10-30V).
  • The maximum allowed power dissipation for DMNH10H028SCT is 1.5W, and it's essential to ensure the device operates within this limit to prevent overheating and damage.
  • While the DMNH10H028SCT can be used as a switch, its frequency response is limited to around 100kHz. For high-frequency applications, consider using a more suitable device, such as a dedicated high-frequency MOSFET or a specialized RF switch.
  • To protect the DMNH10H028SCT from ESD, handle the device with an anti-static wrist strap or mat, and ensure the PCB has adequate ESD protection, such as TVS diodes or ESD-protection circuits.

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DMNH10H028SCT Overview

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