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DMP2005UFG-13 - Diodes Incorporated

Description: MOSFET MOSFET BVDSS: 8V-24V

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DMP2005UFG-13 - Diodes Incorporated PCB footprint - Other - Other - PowerDI3333-8_ffw
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DMP2005UFG-13 - Diodes Incorporated  - 3D model - Other - PowerDI3333-8_ffw
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DMP2005UFG-13 Details

  • Manufacturer Part Number:

    DMP2005UFG-13

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    12 Weeks

  • Manufacturer:

    Diodes Incorporated

  • YTEOL:

    7

  • Additional Feature:

    HIGH RELIABILITY

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    20 V

  • Drain Current-Max (ID):

    19 A

  • Drain-source On Resistance-Max:

    0.004 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    S-PDSO-N5

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    48 W

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

DMP2005UFG-13 Frequently Asked Questions (FAQs)

  • Diodes Incorporated recommends a PCB layout with a thermal pad connected to a large copper area on the top and bottom layers, with vias to dissipate heat efficiently.
  • The DMP2005UFG-13 requires a bias voltage of 2.5V to 5.5V on the gate pin, and a drain-source voltage of up to 20V. Ensure the bias voltage is within the recommended range and the drain-source voltage is within the absolute maximum rating.
  • The maximum power dissipation for the DMP2005UFG-13 is 1.5W, and it's essential to ensure the device operates within this limit to prevent overheating and damage.
  • Yes, the DMP2005UFG-13 is suitable for high-frequency switching applications up to 100MHz. However, it's essential to consider the device's switching characteristics, such as rise and fall times, and ensure the application's requirements are within the device's capabilities.
  • Diodes Incorporated recommends using ESD protection devices, such as TVS diodes or ESD arrays, to protect the DMP2005UFG-13 from electrostatic discharge. Additionally, follow proper handling and storage procedures to prevent ESD damage.

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DMP2005UFG-13 Overview

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