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DMP3125L-13 - Diodes Incorporated

Description: 30V P-CHANNEL ENHANCEMENT MODE MOSFET

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DMP3125L-13 - Diodes Incorporated  - 3D model
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DMP3125L-13 Details

  • Manufacturer Part Number:

    DMP3125L-13

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    SOT-23, 3 PIN

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Factory Lead Time:

    12 Weeks

  • Manufacturer:

    Diodes Incorporated

  • YTEOL:

    7

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    2.5 A

  • Drain-source On Resistance-Max:

    0.095 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    7 pF

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation Ambient-Max:

    1.2 W

  • Surface Mount:

    YES

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

DMP3125L-13 Frequently Asked Questions (FAQs)

  • A good PCB layout for the DMP3125L-13 should include a solid ground plane, wide copper traces for the drain and source pins, and a thermal relief pattern under the device to facilitate heat dissipation. A minimum of 2oz copper thickness is recommended.
  • To ensure proper biasing, the gate-source voltage (Vgs) should be between 2V and 10V, and the drain-source voltage (Vds) should be within the recommended operating range. A gate resistor (Rg) between 1kΩ and 10kΩ is also recommended to prevent oscillations.
  • To prevent ESD damage, handle the device in an ESD-controlled environment, use anti-static wrist straps or mats, and avoid touching the device pins or leads. Use ESD-safe packaging and storage materials, and ensure all equipment and tools are properly grounded.
  • Yes, the DMP3125L-13 is suitable for high-frequency switching applications up to 1MHz. However, ensure proper PCB layout, decoupling, and filtering to minimize electromagnetic interference (EMI) and radio-frequency interference (RFI).
  • To determine the maximum allowable power dissipation, calculate the device's power dissipation (PD) using the formula PD = Vds x Ids x frequency. Then, ensure the calculated PD is within the recommended maximum power dissipation rating of 2.5W.

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DMP3125L-13 Overview

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