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DTA113TKAT146 - ROHM Semiconductor

Description: Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 250 MHz 200 mW Surface Mount SMT3

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PCB Footprints
DTA113TKAT146 - ROHM Semiconductor PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - SMT3
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3D Models
DTA113TKAT146 - ROHM Semiconductor  - 3D model - SOT23 (3-Pin) - SMT3
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DTA113TKAT146 Details

  • Manufacturer Part Number:

    DTA113TKAT146

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Part Package Code:

    SC-59

  • Package Description:

    ROHS COMPLIANT, SMT3, 3 PIN

  • Pin Count:

    3

  • ECCN Code:

    EAR99

  • Manufacturer:

    ROHM Semiconductor

  • YTEOL:

    3

  • Additional Feature:

    BUILT-IN BIAS RESISTOR

  • Collector Current-Max (IC):

    0.1 A

  • Collector-Emitter Voltage-Max:

    50 V

  • Configuration:

    SINGLE WITH BUILT-IN RESISTOR

  • DC Current Gain-Min (hFE):

    100

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e1

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    PNP

  • Power Dissipation-Max (Abs):

    0.2 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin/Silver/Copper (Sn/Ag/Cu)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    250 MHz

  • VCEsat-Max:

    0.3 V

DTA113TKAT146 Frequently Asked Questions (FAQs)

  • ROHM recommends a thermal pad on the bottom of the package, connected to a large copper area on the PCB to dissipate heat efficiently. A minimum of 2oz copper thickness is recommended.
  • The DTA113TKAT146 requires a stable voltage supply and a proper biasing circuit to ensure optimal performance. A voltage regulator and a bias resistor network can be used to achieve this.
  • The maximum allowable power dissipation for the DTA113TKAT146 is 1.5W. Exceeding this limit can cause the device to overheat and potentially fail.
  • Yes, the DTA113TKAT146 is suitable for high-frequency applications up to 100MHz. However, the device's performance may degrade at higher frequencies, and additional circuitry may be required to maintain stability.
  • ROHM recommends using ESD protection devices, such as TVS diodes or ESD protection ICs, to protect the DTA113TKAT146 from electrostatic discharge. Proper handling and storage procedures should also be followed.

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DTA113TKAT146 Overview

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Part Image DTA113TKAT246 ROHM Semiconductor

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon