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DTA114ECAT116 - ROHM Semiconductor

Description: PNP, SOT-23, R1=R2 Potential Divider Type Digital Transistor (Bias Resistor Built-in Transistor)

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PCB Footprints
DTA114ECAT116 - ROHM Semiconductor PCB footprint - Other - Other - SOT-23 (SST3) _ 2022
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3D Models
DTA114ECAT116 - ROHM Semiconductor  - 3D model - Other - SOT-23 (SST3) _ 2022
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DTA114ECAT116 Details

  • Manufacturer Part Number:

    DTA114ECAT116

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    SST3, 3 PIN

  • Pin Count:

    3

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.21.00.75

  • Manufacturer:

    ROHM Semiconductor

  • YTEOL:

    7

  • Additional Feature:

    BUILT-IN BIAS RESISTOR RATIO IS 1

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    0.1 A

  • Collector-Emitter Voltage-Max:

    50 V

  • Configuration:

    SINGLE WITH BUILT-IN RESISTOR

  • DC Current Gain-Min (hFE):

    30

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e1

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    PNP

  • Power Dissipation Ambient-Max:

    0.2 W

  • Power Dissipation-Max (Abs):

    0.2 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin/Silver/Copper (Sn/Ag/Cu)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    10

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    250 MHz

  • VCEsat-Max:

    0.3 V

DTA114ECAT116 Frequently Asked Questions (FAQs)

  • The recommended operating temperature range for the DTA114ECAT116 is -40°C to 125°C, as specified in the datasheet. However, it's essential to note that the device's performance and reliability may degrade if operated outside this range for extended periods.
  • To ensure proper biasing, follow the recommended voltage and current ratings specified in the datasheet. Typically, a voltage supply of 5V ±10% and a current limit of 50mA are recommended. Additionally, ensure that the input and output pins are properly terminated to prevent signal reflections and noise.
  • The maximum allowable power dissipation for the DTA114ECAT116 is 500mW, as specified in the datasheet. Exceeding this limit may cause the device to overheat, leading to reduced performance, reliability issues, or even permanent damage.
  • While the DTA114ECAT116 is designed for general-purpose applications, it's not optimized for high-frequency use. The device's bandwidth is limited to around 100kHz, and its performance may degrade significantly at higher frequencies. If you need a high-frequency device, consider using a specialized component designed for high-frequency applications.
  • To prevent electrostatic discharge (ESD) damage, follow proper handling and storage procedures. Use an anti-static wrist strap, mat, or other ESD protection devices when handling the component. Ensure that the device is stored in an anti-static bag or container when not in use.

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